850nm光波段次兆赫波高功率、高效能光電發射器

High power and high efficiency Sub-THz Photonic-Transmitters at 850nm wavelength

邱治恒(Chih-Heng Chiu)

指導教授 ： 許晉瑋

國立中央大學/資訊電機學院/電機工程學系/碩士(2007年)

摘要

在本論文的研究中我們證實了一個理想的光電發射器，他是整合了低溫成長砷化鎵(LTG-GaAs)為基準的分離式傳輸複合光二極體(STR-PD)和一個槽孔式的微波天線。而利用超快速飛秒光脈衝以及連續波光訊號的照射下，我們的元件幅射出依個強而有利的電脈衝訊號(最大功率4.5mW)而不需要使用Si-lens。而且由傅立葉轉換紅外光譜儀(FTIR)量測之頻譜可以明顯的發現，在我們所設計的槽孔式天線共振頻率為500GHz 的地方我們有最大的功率為300W，與傳統的LTG-GaAs 基準的光電發射器相比，我們的元件在高外部電場(>50kV/cm)操作下時THz 功率並不會出現飽和的限制。

關鍵字

次兆赫波 ； 分離式傳輸復合行波式光二極體 ； 天線

並列摘要

We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs) based separated-transportrecombination photodiode (STR-PD) and a micromachined slot antenna. Under femto-second optical pulse illumination and Continuous-Wave(CW) illumination, this device radiates strong electrical pulses (4.5mW peak power) without the use of a Si-lens. It can be observed in the Fourier Transform Infrared Spectrometer (FTIR) spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300W peak power, occurs at 500GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output THz power that occurs with the traditional LTG-GaAs based photonic-transmitters when operated under high external applied electrical fields (>50kV/cm) has been eliminated by the use of our device.

並列關鍵字

antenna ； STR-PD ； Sub-THz

參考文獻

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