DOI
stands for Digital Object Identifier
(
D
igital
O
bject
I
dentifier
)
,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
「
http://dx.doi.org/
」
before a DOI.
For instance, if the DOI of an article is
10.5297/ser.1201.002
, you can link persistently to the article by entering the following link in your browser:
http://dx.doi.org/
10.5297/ser.1201.002
。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration ( doi.airiti.com ) 。


- [1] L. Raniero, N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins, "Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell," Solar Energy Mater. Solar Cells 87, 349-355 (2005).
連結: - [2] P. Ray, P. Chaudhuri, and P. Chatterjee, "Hydrogenated amorphous silicon films with low defect density prepared by argon dilution: application to solar cells," Thin Solid Films 403, 275-279 (2002).
連結: - [3] Koel Adhikary, Swati Ray, "Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells," Journal of Non- Crystalline Solids 353, 2289–2294 (2007).
連結: - [4] D. Jousse, J. Said, J. C. Bruyere, "Boron doping of amorphous hydrogenated silicon films prepared by RF sputtering," Thin Solid Films 124, 49-53 (1985).
連結: - [5] Y. Ohmura, M. Takahashi, M. Suzuki, N. Sakamoto, T. Meguro, "P-type doping of h ydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering," Physica B 308–310,257–260 (2001).
連結:
- 紀懿芳(2014)。單一相Cu2ZnSnS4濺鍍靶材之製備及其應用於薄膜太陽能電池光吸收層之研究。交通大學奈米科技研究所學位論文。2014。1-78。
- 王宣文(2012)。以濺鍍法製作矽異質接面太陽能電池之研究:矽薄膜特性對元件效率的影響。中央大學光電科學研究所學位論文。2012。1-113。
- 莊正安(2012)。鍍膜腔體電漿分佈特性研究。臺北科技大學優質電力供電產業研發碩士專班學位論文。2012。1-75。
- 李京樺(2014)。以矽硼合金靶製作異質接面太陽能電池。中央大學光電科學與工程學系學位論文。2014。1-142。
- 邱士良(2014)。應用錫球陣列與覆晶技術之CMOS微磁通閘設計及製作。臺北科技大學機電整合研究所學位論文。2014。1-65。