以射頻磁控濺鍍法鍍製P型和N型微晶矽薄膜之研究

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以射頻磁控濺鍍法鍍製P型和N型微晶矽薄膜之研究

Fabrication of P type and N type Hydrogenated Microcrystalline Silicon Thin Films Using RF Magnetron Sputtering

鄧旭軒 , Masters　　Advisor：陳昇暉;李正中　　

繁體中文

微晶矽薄膜；物理氣相沈積法；太陽能電池； microcrystalline silicon thin film ； PVD ； Solar cell

Abstract │ Reference (18) │ Times Cited (5) │ Altmetrics

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In the last decades, the researches of thin film solar cells have attracted much attention for the reason of the energy crisis. Plasma-enhance chemical vapor deposition (PECVD) is the most popular method to fabricate silicon thin film solar cells. The disadvantages of PECVD are the high facility cost and using the toxic processing gases such as silane (SiH4), B2H6 and PH5. To solve the problem the reactive radio frequency sputtering deposition was applied in this research, which is a safe and cheap method to fabricate the doped hydrogenated microcrystalline silicon without using any toxic gas. The p type and n type hydrogenated microcrystalline silicon (μc-Si:H) thin films were fabricated with the different concentration of the doped target and the hydrogen gas flow. The properties of the films were measured using Alpha–Step, XRD, conductivity, carrier concentration, carrier mobility, and activation energy measurement. The results show that when the boron grains occupied 30% of the p type silicon target area and hydrogen flow 9sccm, the best conductivity is achieved at about 3.79×10-2 S/cm for the p type μc-Si:H thin film. The μc-Si:H grain size is 4.84nm in the film. The activation energy is 0.044ev. Using Hall measurement, the carrier concentration is achieved at 3.34×1018cm-3 and carrier mobility 0.516cm2/V-S. Besides, when n type silicon wafer occupied 75% of the silicon target area and hydrogen flow 7sccm for the n type μc-Si:H thin film, the best conductivity is achieved at about 9.66×10-3 S/cm. The μc-Si:H grain size is 12.5nm in the film. The activation energy is 0.11ev. Using Hall measurement, the carrier concentration is achieved at 1.11×1018cm-3 and carrier mobility 0.525cm2/V-S. Both results have met the requirements of p type and n type μc-Si:H thin films for the application of thin film solar cells.

Reference ( 18 ) 〈TOP〉

[1] L. Raniero, N. Martins, P. Canhola, S. Zhang, S. Pereira, I. Ferreira, E. Fortunato, and R. Martins, "Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p-i-n solar cell," Solar Energy Mater. Solar Cells 87, 349-355 (2005).
連結：
[2] P. Ray, P. Chaudhuri, and P. Chatterjee, "Hydrogenated amorphous silicon films with low defect density prepared by argon dilution: application to solar cells," Thin Solid Films 403, 275-279 (2002).
連結：
[3] Koel Adhikary, Swati Ray, "Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells," Journal of Non- Crystalline Solids 353, 2289–2294 (2007).
連結：
[4] D. Jousse, J. Said, J. C. Bruyere, "Boron doping of amorphous hydrogenated silicon films prepared by RF sputtering," Thin Solid Films 124, 49-53 (1985).
連結：
[5] Y. Ohmura, M. Takahashi, M. Suzuki, N. Sakamoto, T. Meguro, "P-type doping of h ydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering," Physica B 308–310,257–260 (2001).
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