以非晶化及再結晶消除奈米尺度矽晶薄膜之晶格缺陷

Crystallographic Defect Elimination of Silicon Nano-Membrane by Amorphousization and Recrystallization

張祐綸(You-lun Zhang)

指導教授 ： 李天錫

國立中央大學/工學院/機械工程學系/碩士(2014年)

摘要

本研究目標為使用智切法技術製作超薄絕緣層矽晶材料，其矽薄膜厚度低於100奈米，因離子佈植能量受限，要製作100奈米的矽薄膜必須配合犧牲層技術，在此厚度下矽薄膜會因離子佈植而產生晶格缺陷，因此本論文核心為透過非晶化及再結晶去修復矽薄膜中的晶格缺陷，以雲式離子佈植取代離子束佈植以達到非晶化矽薄膜的效果，並討論不同薄膜轉移條件下對於矽薄膜再結晶的影響，再結晶時的實驗參數包含溫度、時間、環境氣氛，經過再結晶後的試片以X光繞射測得其晶體結構為單晶矽薄膜，此實驗理論基礎為結晶動力學，本研究成果對於未來製作超薄絕緣層矽晶材料的相關研究深具啟發意義，並有助於解決半導體製程尺寸微縮的問題。

關鍵字

智切法 ； 絕緣層矽晶材料 ； 非晶化 ； 再結晶

並列摘要

The goal of this research is to use Smart-Cut to produce ultra-thin Silicon-on-Insulator. The thickness of silicon film is less than 100 nm which is due to the energy constrained from ion implantation. In order to make a 100 nm, sacrificial layer technology must be used because of the thickness of the silicon ion implantation to produce lattice defects. Therefore, the aim of this research is to repair defects in the crystal lattice of silicon thin film by amorphousization and recrystallization, to use the Ion-Shower implanter to replace the Ion-Beam implanter in order to achieve amorphous silicon films and discuss the impact of the transfer film silicon thin film under different conditions recrystallization. The experimental parameters comprise temperature, time, and atmosphere. After recrystallization specimen obtaining from crystal X-Ray diffractometer, the results showed that it’s single-crystal silicon thin film structure. This theoretical basis of this experiment is for the kinetics of crystallization. The research findings is helpful for future production of ultra-thin Silicon-on-Insulator material inspirational significance and help solve scaling down the size of the semiconductor manufacturing process problems.

參考文獻

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