MOCVD噴淋式腔體沉積模擬與進氣系統分析

游翔霖

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MOCVD噴淋式腔體沉積模擬與進氣系統分析

游翔霖 , Masters　　Advisor：洪銘聰　　

繁體中文

數值模擬； MOCVD ；近耦合噴淋式腔體； numerical simulation ； MOCVD ； close-coupled showerhead

Abstract │ Reference (21) │ Altmetrics

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Metalorganic chemical vapor deposition is widely used in LED manufacturing. There are different reactor designs on the current market including TurboDisc, planetary, and close-coupled showerhead. Close-coupled showerhead reactor has good deposition uniformity and minimum source gas usage, but it has gas inlet nozzle plugging problem. In this study, we use finite element method to simulate the reaction and physical phenomena in a close-coupled showerhead reactor and evaluate the GaN deposition uniformity and the gas inlet nozzle plugging problem. The results show that the main species in the vicinity of the inlet nozzle is TMG and TMG:NH3. While the main species near the susceptor surface is MMG. The concentration of DMGNH2 in the reactor is very low. Increasing the gas inlet velocity can increase the growth rate and reduce nozzle plugging. Increasing the mass fraction of TMG source gas results in the increase of both the growth rate and nozzle plugging, but it is less significant on the plugging problem. Finally, we modified the inlet nozzles with barriers and chamfers.We found that the epitaxial growth increases and the nozzle plugging reduces with increasing barrier length. In the chamfering design, we found both the epitaxial growth and the nozzle plugging reduce with increasing chamfering length.

Reference ( 21 ) 〈TOP〉

[6]Jingxi Sun, J. M. Redwing, and T. F. Kuech, “Model Development of GaN MOVPE Growth Chemistry for Reactor Design,” J. Electron. Mater. , vol. 29, no. 1, Jul, 2000.
連結：
[7]Chang-Yong Shin, Byung-Joon Baek, Cheul-Ro Lee, Bokchoon Pak, Jeong-Mo Yoon, Keun-Seop Park, “Numerical analysis for the growth of GaN layer in MOCVD reactor,” J. Cryst. Growth, vol. 247, pp. 301-312, Sep, 2003.
連結：
[8]Debasis Sengupta, Sandip Mazumder, William Kuykendall, Samuel A. Lowry, “Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth,” J. Cryst. Growth, vol. 279, pp. 369-382, Feb, 2005.
連結：
[9]Rinku P. Parikh, Raymond A. Adomaitis, Michael E. Aumer, Deborah P. Partlow, Darren B. Thomson, Gary W. Rubloff, “Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor,” J. Cryst. Growth, vol. 296, pp. 15-26, Jul, 2006.
連結：
[10]M. Dauelsberg, C. Martin, H. Protzmann, A. R. Boyd, E. J. Thrush, J. Kappeler, M. Heuken, R. A. Talalaev, E. V. Yakovlev, A. V. Kondratyev, “Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors,” J. Cryst. Growth, vol. 298, pp. 418-424, Nov, 2007.
連結：

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