利用急冷旋鑄及真空熱壓製備Zn4Sb3奈米/微米晶塊材之熱電性質與機械性質研究

陳漢文

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利用急冷旋鑄及真空熱壓製備Zn4Sb3奈米/微米晶塊材之熱電性質與機械性質研究

The study of thermoelectric and mechanical properties for the nano-/micro-grain Zn4Sb3 fabricated by melt spinning and vacuum hot pressing

陳漢文 , Masters　　Advisor：鄭憲清　　

繁體中文

Zn4Sb3 ；真空熱壓法； ZT值

Abstract │ Reference (27) │ Altmetrics

Abstract 〈TOP〉

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The β-Zn4Sb3 thermoelectric(TE) material β-Zn4Sb3 has the best performance during 350~400℃.  Its advantages include low cost and simple fabricate process. Some researches indicated that its ZT value can reach 1.37 at 400℃
In this study, we select two methods to fabricate nano- and micro- grained Zn4Sb3 process. One is melt spinning process (30 m/s) for Zn4Sb3 ribbon and the other one is a traditional manufacture method by using melt diffusion and quenching for bulk sample. The melt spun ribbons and melt diffused bulk material were both grinded into powders, then mix these two powders with nano/micro-grain sized powder ratio of 95/5 vol.%、90/10 vol.%、85/15 vol.% and 80/20 vol.%. Then these mixed powders were fabricated into bulk samples via vacuum hot pressing (HP) method. The fracture toughness can reach as high as 1.46 MPa．m1/2 because of its high relative density above 99.5%. We propose that with nano- and micro- grained composite structure can increase the phonon scattering and decrease the lattice thermal conductivity at the same time and so as to enhance ZT value. The results show that the optima thermoelectric property occurs at the bulk sample with nano/micro-grain grained vol.ume ratio of 80/20, the measurement of the Seebeck coefficient, electric conductivity, and thermal conductivity are 213 μV/K, 337 S/cm and 7.53 mW/cmK2 ,respectively, which presented a ZT value as high as 1.22 at 598 K.

Reference ( 27 ) 〈TOP〉

〔1〕T. Caillat, J.-P. Fleurial, A. Borshchevsky, “Preparation and thermoelectric properties of semiconducting Zn4Sb3”, Journal of Physics and Chemistry of Solids, vol. 58, pp.1119-1125, 1997.
連結：
〔2〕Soon-Chul Ur, Philip Nash, Il-Ho Kim, “Solid-state syntheses and properties of Zn4Sb3 thermoelectric materials”, Journal of Alloys and Compounds, vol. 361, pp.84-91, 2003.
連結：
〔3〕L.T. Zhang, M. Tsutsui, K. Ito, M. Yamaguchi, “Effects of ZnSb and Zn inclusions on the thermoelectric properties of β-Zn4Sb3”, Journal of Alloys and Compounds, vol. 358, pp.252-256, 2003.
連結：
〔4〕Soon-Chul Ur, Philip Nash, Il-Ho Kim, “Thermoelectric properties of Zn4Sb3 directly synthesized by hot pressing”, Materials Letters, vol. 58, pp.2132-2136, 2004.
連結：
〔6〕顏潤賢，利用急冷旋鑄及真空熱壓製備β-Zn4Sb3奈米微米晶塊材之熱電性質探討，中央大學機械工程學系碩士論文，2014。
連結：

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