stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
謝泓火奇 , Masters Advisor：張正陽
-  V. Sorianello, et al, "Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterization", Microelectronic Engineering 88 (2011) 526–529.
-  A.F. Abd Rahim, M.R. Hashim, N.K. Ali, A.M. Hashim, M. Rusop, M.H. Abdullah, "The evolution of Si-capped Ge islands on Si (100) by RF magnetron sputtering and rapid thermal processing: The role of annealing times", Microelectronic Engineering 126 (2014) 134–142.
-  Zhiwen Zhoua, Cheng Lia, Hongkai Laia, Songyan Chena, Jinzhong Yub, "The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition", Journal of Crystal Growth 310 (2008) 2508–2513.
-  V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley, "High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate", Solid-State Electronics 62 (2011) 189–194.
-  Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd Tillack, "Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD", Solid-State Electronics 60 (2011) 2–6.
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