低溫製備矽基鍺磊晶薄膜及矽基鍺緩衝層砷化鎵薄膜之研究

謝泓火奇

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低溫製備矽基鍺磊晶薄膜及矽基鍺緩衝層砷化鎵薄膜之研究

Low Temperature Growth and Fabrication of Silicon-based Epitaxial Germanium Films and Silicon-based Epitaxial Germanium Buffer Gallium Arsenide Films

謝泓火奇 , Masters　　Advisor：張正陽　　

繁體中文

低溫；電子迴旋共振化學氣相沉積法；鍺薄膜；砷化鎵薄膜；虛擬基板；鍺光偵測器； Low Temperature ； ECR-CVD ； Germanium Film ； Gallium Arsenide Film ； Virtual substrate ； Gallium Photodetector

Abstract │ Reference (42) │ Altmetrics

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In this study, we use the electron cyclotron resonance chemical vapor deposition (ECR-CVD) to grow epitaxial germanium (Ge) thin films on single crystal silicon substrates (c-Si) and applied to the photodetector at a low temperature. Ge films grow on Si substrate has many benefit. (1)Ge has higher carrier mobility and smaller bandgap than Si. (2) Compared to a bulk Ge devices, Ge/Si devices can cost down. (3) Ge/Si devices are integrated on Si process easily. In this work, we use ECR-CVD to deposit epitaxial Ge on c-Si at a low growth temperature of 180 oC. Then, we use atomic force microscope (AFM), X-ray diffraction (XRD), and Etch pit density (EPD) to characterize the thin films properties. The result shows that the XRD full width at half maximum (FWHM) of 406 arcsec, AFM root mean square surface roughness (rms) of 2nm and EPD threading dislocations density (TDD) of 107cm-2 can be obtained when the Ge film thickness is 100 nm. After that, We fabricate a PIN Ge photodetector. The responsivity of photodetector in 1310 nm light source is 0.01 A/W at -1V and the dark current density is 0.2 mA/cm2. In addition, GaAs layers were grown by MBE and MOCVD on Ge/Si substrates. Compared to a bulk GaAs technology, this technology has great potential for use in the growth of GaAs nanoelectronic devices and optoelectronic devices on the Si substrate. The result shows that the XRD full width at half maximum (FWHM) of 257 arcsec.

Reference ( 42 ) 〈TOP〉

[1] V. Sorianello, et al, "Thermal evaporation of Ge on Si for near infrared detectors: Material and device characterization", Microelectronic Engineering 88 (2011) 526–529.
連結：
[2] A.F. Abd Rahim, M.R. Hashim, N.K. Ali, A.M. Hashim, M. Rusop, M.H. Abdullah, "The evolution of Si-capped Ge islands on Si (100) by RF magnetron sputtering and rapid thermal processing: The role of annealing times", Microelectronic Engineering 126 (2014) 134–142.
連結：
[4] Zhiwen Zhoua, Cheng Lia, Hongkai Laia, Songyan Chena, Jinzhong Yub, "The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition", Journal of Crystal Growth 310 (2008) 2508–2513.
連結：
[5] V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley, "High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate", Solid-State Electronics 62 (2011) 189–194.
連結：
[6] Yuji Yamamoto, Peter Zaumseil, Tzanimir Arguirov, Martin Kittler, Bernd Tillack, "Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD", Solid-State Electronics 60 (2011) 2–6.
連結：

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