氮化鎵LED表面粗糙對光萃取效率之最佳化研究

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College of Science > Graduate Institute of Optoelectronic Sciences
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氮化鎵LED表面粗糙對光萃取效率之最佳化研究

Optimization of surface roughness of GaN LED for enhancement of light extraction efficiency

林哲君 , Masters　　Advisor：陳啟昌　　

繁體中文

發光二極體；基因演算法； Genetic Algorithms ； LED

Abstract │ Reference (40) │ Times Cited (1) │ Altmetrics

Abstract 〈TOP〉

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The subject of this thesis is to promote the light extraction of light emitting diodes by using the concept of optical waveguide. We use the Finite-Difference Beam Propagation Method (FD-BPM) to simulate the GaN LED waveguide and calculate the angle ( ) corresponding to strongest guided mode. According to the simulation results of FD-BPM, we can design the maximum transmission efficiency grating structure to roughen the surface of the GaN to increase the light extraction. First, we used FD-BPM to compute the relationship between the position of the Multi Quantum Wells (MQWs) and the strongest modes. From the simulation results, the angles of the strongest modes can be obtained. According to the angles of the strongest modes obtained by FD-BPM, we adopted the Rigorous Coupled Wave Analysis (RCWA) to compute the transmission efficiency of the grating structure and the Genetic Algorithms (GAs) to optimize the parameters of the grating structure to find the maximum transmission efficiency. From the results of the GAs, the optimum parameters of the grating structure at the wavelength of 460 nm the grating period were 2.07 ?m, filling factor 0.51 and etching depth 0.2 ?m. The light extraction efficiency of the grating structure compared to the slab structure was promoted to 36 %. The LED with the periodic structure can be rapidly determined by the FD-BPM and the RCWA based on the GAs to optimize the light extraction.

Reference ( 40 ) 〈TOP〉

[3] E. F. Schubert, "Light Emitting Diodes, " ( Cambridge University Press, Cambridge,2003)
連結：
[4] M. Y. Hsieh, et al. "Improvement of External Extraction Efficiency in GaN-Based LEDs by SiO2 Nanosphere Lithography, " IEEE Photon. Technol. Lett. 29, 658 (2008)
連結：
[5] Y. J. Lee, et al. "Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces, " J. Lihgtwave Technol. 26, 1455 (2008)
連結：
[6] T. K. Kim, et al. "GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder, " Appl. Phys. Lett. 94, 161107 (2009)
連結：
[7] C. H. Kuo, et al. "Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN, " Appl. Phys. Lett. 90, 142115 (2007)
連結：

Times Cited (1) 〈TOP〉

林忠毅(2017)。壓模製程參數對色度集中度的影響。虎尾科技大學光電工程系光電與材料科技碩士班學位論文。2017。1-71。

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