以濺鍍法製作矽異質接面太陽能電池之研究:矽薄膜特性對元件效率的影響

王宣文

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以濺鍍法製作矽異質接面太陽能電池之研究:矽薄膜特性對元件效率的影響

Research of High Efficiency Silicon Heterojunction Solar Cell Fabricated by Sputtering:Impact of Silicon Thin Film Properties on Device Performance

王宣文 , Ph.D　　Advisor：李正中;陳昇暉　　

繁體中文

異質接面太陽能電池；矽薄膜；磁控濺鍍； heterojuction solar cell ； silicon thin film ； magnetron sputtering

Abstract │ Reference (85) │ Times Cited (6) │ Altmetrics

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Sputtering is a popular technique with many advantages for thin film deposition. However, as for the preparation of hydrogenated silicon thin film, ion bombardment accompanies during sputtering may generate microstructures (voids, columnar structures) within the film, which leads to unfavorable silicon dihydride bodings and electrical defects. Therefore, hydrogenated silicon films fabricated by sputtering are hard to be doped. Those inferior properties made sputtering become non-popular in the fabrication of silicon thin film cells.
  In this research, we improved the qualities of hydrogenated silicon thin films and investigated electrical and optical properties with respect to deposition parameters. Our results indicated that applying positive bias voltage on the substrate provokes silicon monohydride formation, which is a rather stable bonding configuration as compared to silicon dihydride. Besides, the difficulties of doping can be reduced by refining fabrication parameters such as sputtering power and gas pressure. Futhermore, amorphous P-type / crystalline N-type silicon heterojunction solar cell using non-texture wafer surface has also been demonstrated. Proto-type solar cells with 1cm × 1cm area and 10% conversion efficiency were realized by choosing the appropriate sputtering parameters.

Reference ( 85 ) 〈TOP〉

[1.2] W. Schockley and H. J. Queisser, “Detailed balance limit of efficiency of p-n junction solar cells”, J. Appl. Phys. 32 (1961) 510-519.
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[2.1] J. Tauc, “Optical properties and electronic structure of amorphous Ge and Si”, Mat. Res. Bull. 3 (1967) 37-46.
連結：
[2.2] R. C. Chittick, J. H. Alexander and H. F. Sterling, “The preparation and properties of amorphous silicon”, J. Electrochem. Soc. 116 (1969) 77-81.
連結：
[2.3] W. E. Spear and P. G. LeComber,”Investigation of the localized state distribution in amorphous Si films”, J. Non-Cryst. Solids 8-10 (1972) 727-738.
連結：
[2.4] W. E. Spear and P. G. LeComber,”Subsitutional doping of amorphous silicon”, Solid State Commun. 17 (1975) 1193-1196.
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