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  • 學位論文

以旋轉塗佈法製備銦鎵鋅氧化物薄膜及其電晶體特性研究

Preparation and Characterization of Spin-Coating In-Ga-Zn Oxide Thin-film and its Transistor

指導教授 : 林鴻明
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摘要


隨著3C產業的蓬勃發展,以LCD為主的平面顯示器(FPD)產量逐年增加,目前在全球顯示器市場已佔有重要的地位。近幾年來環保意識的提升及生活水準的提高,3C商品均朝向輕薄短小的趨勢發展,因此越來越多顯示器相關業者與廠商開始投入降低成本,及可撓式電子紙之開發研究,其中以ZnO參雜三價元素銦、鎵之IGZO材料最被看好。 本研究嘗試以低成本的溶膠凝膠法製備IGZO半導體薄膜,利用新的製程方式取代傳統的有毒溶劑----乙二醇甲醚(2-ME),並嘗試改變銦之比例及熱處理條件,探討其物理及化學變化,藉由TGA來分析漿料在不同溫度下的變化,XRD觀察其晶體結構、SPM觀測薄膜表面之成膜狀況、UV觀察其薄膜穿透率、霍爾效應量測薄膜之載子濃度及電阻率,最後再利用半導體參數分析儀量測其開關電流比(on/off current ratio)、起始電壓(Vth)以及場效載子遷移率(μ)。 本研究成功將n-type 之IGZO半導體薄膜應用於薄膜電晶體之主動層上,在銦、鎵、鋅比例4:1:2,及空氣中500°C熱處理1小時,經由分析後發現可以達到相當平坦的表面粗糙度 0.8 nm,薄膜在可見光區之透光率達95%左右,且經由霍爾量測出其電阻率約0.86(Ω -Cm),在實際應用於TFT元件上時,可以達到場效載子遷移率0.63 cm2/Vs、開關電流比約為106、起始電壓4.42V、次臨界斜率1.37 V/dec。

並列摘要


With the development of 3C industry, LCD flat panel display (FPD) play an important role and the importance are increased year by year. Currently, in the global display market, LCD FDP is one of the most important one in 3C market. In recent years, the awareness of environmental impacts and rising of living standards, 3C products are facing trends in the development of light, thin, short, and small products. So more and more display-related businesses or manufacturers start to focus the research and develop in cost down, and flexible electronic paper. The trivalent element indium, gallium doped into ZnO of In, Ga, Zn oxide (IGZO) become one of the promising material for active layer in TFT. A novel solution-processed preparation for oxide semiconductor layer is investigated in this study. The generally used process of indium gallium zinc oxide (IGZO), metal salts in toxic 2-methoxy ethanol (2ME) in the related research, is successful substituted by this method. In this study, we also change the contents of indium, and the parameters of heat treatment to study the physical and chemical properties of IGZO. TGA used to analysis the physical change of IGZO solution in increasing temperature, XRD to analysis the structure of the thin-film, SPM observed the surface morphology of the IGZO thin-film, UV analysis the transmittance of the thin-film, hall measurement to measure the carrier concentrations and the resistivity, finally, the semiconductor parameter analyzer use to analyze the on/off current ratio, threshold voltage and carrier mobility. In this study, we successfully used n-type IGZO thin-film as an active layer in TFTs. The In:Ga:Zn ratio of 4:1:2, annealed at 500°C for 1hr in the air, the IGZO thin-film exhibit high optical transmittance of 95% in visible range and smooth surface Rms 0.8 nm, the resistivity is 0.86 (Ω -Cm), Ion/off is about 106, filed-effect mobility is 0.63 cm2/Vs, threshold voltage is 4.42V, and subthreshold swing voltage is 1.37 V/dec.

參考文獻


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