In recent, one-dimensional (1D) nanowires and nanorods have attracted a lot of attention in the various devices. Compared with bulk and thin film devices, 1D nanowire should have a larger response to light due to their large length-to-diameter aspect ratio and high surface-to-volume ratio. They have thus become a promising candidate for the future scaling of advanced nanoelectronic devices. For photovoltaic devices, nanowires have been found to increase sunlight absorption and to enhance the efficiency of solar cell conversion. The present study discusses the fabrication of Si-nanowire-based photovoltaic devices prepared at various temperatures using VLS. Detailed properties of the fabricated photovoltaic devices are also discussed.