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以氣液固法製作矽奈米線太陽能電池

Si Nanowire Solar Cell Prepared by Vapor-Liquid-Solid (VLS) Method

摘要


近年來,一維式的奈米線與奈米柱於光電元件上的應用已備受注目,由於一維奈米線的長-徑比及超高表面積,相較於塊材式與薄膜式元件能有較高的光響應。這對未來的奈米太陽能元件上相當具有發展性。應用於光伏元件上,奈米線可增加光吸收性的特性以提升太陽能電池的轉換效率。本研究以氣-液-固磊晶法製作矽奈米線太陽 能電池並在改變成長溫度下針對元件的特性作探 討。此外,元件的製程條件也加以詳述於其中。

關鍵字

光伏元件 太陽能電池 奈米線

並列摘要


In recent, one-dimensional (1D) nanowires and nanorods have attracted a lot of attention in the various devices. Compared with bulk and thin film devices, 1D nanowire should have a larger response to light due to their large length-to-diameter aspect ratio and high surface-to-volume ratio. They have thus become a promising candidate for the future scaling of advanced nanoelectronic devices. For photovoltaic devices, nanowires have been found to increase sunlight absorption and to enhance the efficiency of solar cell conversion. The present study discusses the fabrication of Si-nanowire-based photovoltaic devices prepared at various temperatures using VLS. Detailed properties of the fabricated photovoltaic devices are also discussed.

並列關鍵字

Photovoltaic Solar Cell Nanowires Silicon

被引用紀錄


簡仕奕(2013)。垂直轉移矽奈米線陣列及其熱傳導係數量測技術開發研究〔碩士論文,國立臺灣師範大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0021-0801201418035648

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