利用化學汽相沉積法合成二氧化釩物奈米線及電性分析

Electronic Properties of Vanadium Dioxide Nanowires by Chemical Vapor Deposition

陳康祺(Kang-Chi Cheng) ； 黃盟文(Meng-Wen Huang) ； 施漢章(Han C. Shih)

《華岡工程學報》 29期 (2012/06) Pp. 47-51

https://doi.org/10.29987/CCUHKJE.201206.0009

摘要

此次研究利用化學汽相沉積法，使用純釩粉末合成出二氧化釩奈米線，成長在矽基板上。由掃描式電子顯微鏡觀察二氧化釩奈米線直徑約在50～100nm之間，長度達數十μm；穿透式電子顯微鏡確認二氧化釩奈米線為單晶結構；透過X光繞射分析顯示，二氧化釩奈米線為單斜晶系結構。藉由能量散佈分析與X光光電子能譜儀對其成分作更進一步之分析。最後透過簡易電壓－電流量測來了解電。

關鍵字

二氧化釩 ； 化學氣相沉積法 ； 奈米線

並列摘要

In this study, vanadium dioxide (VO(subscript 2)) nanowires were synthesized using chemical vapor deposition on Si substrate by pure vanadium. Field emission scanning electron microscope (FESEM) image showed vanadium dioxide nanowires were about 50~100nm, the length achieve several micrometers. High resolution transmission electron microscopy (HRTEM) indicated that VO(subscript 2) nanowires all were single-crystalline structure. X-ray diffraction (XRD) indicated that the structures of VO(subscript 2) nanowires were monoclinic. In addition, the components were analysis by energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). Finally, we used a simple way to test voltage-current and found out electrical properties.

並列關鍵字

vanadium dioxide ； chemical vapor deposition ； nanowires