乾式蝕刻製程在不添加三氟甲烷氣體下之40奈米
反閘及快閃記憶體良率之改善

半導體工業是不斷有新技術引進的工業，最近幾年，此工業在台灣發展的速度，可以用如火如荼來加以形容，正如摩爾定律所預測的一樣，元件的尺寸持續不斷的微縮，以致現今的積體電路 (integrated circuit) 製程技術已經變的十分複雜。為了提升電腦、通訊、消費性電子產品的效能與追求單位晶圓成本的降低，故將電子元件即互補式金氧半導體（complementary metal –oxide –semiconductor ((CMOS）尺寸的縮小，將是追求科技進步的持續性目標。隨著元件尺寸的縮小，已可預見以二氧化矽（SiO2）做為閘極介電層（gate dielectric），在進入45奈米（nm）及32奈米製程的次奈米（sub-nanometer）階段時，其厚度必須小於 1奈米，才可達元件特性需求，相對的周邊 (peripheral) 到元件作動區（cell）的連接導線 (contact hole) 線寬 (critical dimension (CD) 也必須更小，但是因為製程上的需求，製程上的薄膜（thin film）並不會減少太多，蝕刻 (etch) 的深度一樣深，但是連接導線（contact hole）的線寬 (critical dimension ((CD) 卻縮小了，因此導線更容易產生斷路（un-open）和短路（short）等問題，在導線蝕刻製程上就變成一大挑戰。本文主要研究一種半導體nand flash 40奈米鋁銅導線蝕刻製程，且有關於一種利用反應性離子蝕刻（reactive ion etching）之Applied蝕刻設備，在不添加三氟甲烷 (CHF3) 氣體下經由調整不同的蝕刻參數條件，以蝕刻形成鋁銅導線，進而得到較佳之蝕刻輪廓 (etch profile) ，以解決在含有三氟甲烷氣體下之蝕刻易形成缺陷 (defect) 之問題，並得到均勻性(uniformity ((U%) 較好之線寬 (critical dimension ((CD)，以及較好之良率。

關鍵字

金屬蝕刻缺陷；三氟甲烷；蝕刻氣體；鋁合金添加氮氣

並列摘要

Semiconductor industry is new advance of industry , The semiconductor pace of development is very fast in recent years , As Moore’s law forecast , component size changed smaller gradually by produce that the integrated circuit process technology also complex now . For upgrade capacity of computer , communication and consumer electronics products with pursue cost lower of wafer unit , so electronic components produced smaller as complementary metal –oxide -semiconductor：CMOS which the target in the future . For component smaller that process also using by SiO2 as gate dielectric , in 45 nm and 32 nm of sub-nanometer process that the thickness must be lower 1 nm for component spec , also component between from peripheral and cell of contact hole critical dimension , CD must be smaller , but according to process requirement not cause thin film reduce too much , and depth also the same by etching , therefore , the process cause contact hole of critical dimension , CD smaller that wire problem un-open and punch .etc easier， the issue create a big challenge in etching process . This paper is talking about yield improvement of 40 nm NAND flash technology by using a CHF3 free dry etching process. It’s about an equipment of Applied etch which uses Reactive Ion Etching to adjust different parameters by CHF3 free dry etching process that the etch could get the better Etch profile to solve the problems for Critical Dimension，CD , such as WC/WE uniformity. Besides, it also get the better defect performance and yield improvement.