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Search Symbol (Half-width) Description of Search Symbols
Space "AND" indicates the intertwining of key terms used in a search
Double Quotation Marks ("") ( " " ) Double quotation marks indicate the beginning and end of a phrase, and the search will only include terms that appear in the same order of those within the quotations. Example: "image process" : " image process "
? Indicates a variable letter. Entering two ? will indicate two variable letters, and so on. Example: "Appl?", search results will yield apple, apply… e , appl y … ( (often used to English word searches) )
* Indicates an unlimited number of variable letters to follow, from 1~n. Example: Enter "appl*", search results will yield apple, apples, apply, applied, application…(often used in English word searches) e , appl es , appl y , appl ied , appl ication … ( (often used to English word searches) )
AND、OR、NOT

Boolean logic combinations of key words is a skill used to expand or refine search parameters.
(1) AND (1) AND: Refines search parameters
(2) OR (2) OR: Expands search parameters (3) NOT: Excludes irrelevant parameters

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DOI stands for Digital Object Identifier ( D igital O bject I dentifier ) ,
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.

Using DOI as a persistent link

To create a persistent link, add「http://dx.doi.org/」 「 http://dx.doi.org/ 」 before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.

Cite a document with DOI

When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.

DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registrationdoi.airiti.com ) 。

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Times Cited : (2)

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What is "Preprint"?

In order to provide readers the forefront academic information, after articles are accepted to publish in the journal, we publish them in network before they're printed. Those "on-line first articles" are called the "preprint articles". The preprint articles do not have volume No., page No., publication date, but can be identified by the DOI number. 「 http://dx.doi.org/ 」 Link to the latest version of the article.

How to cite Preprint Articles?

Please use the online publication date and the DOI number of the preprint article to cite the literature.

Cited example (may vary with different formats you cited):

Author name. Article name. Journal name. YYYY/MM/DD online publish in advance.

doi:DOI Number

Publisher

National Cheng Kung University

Taiwan

國立成功大學 Publishing 』

成大_NCKU
2020年
Total6Pages
Most Recently Published/Page #
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1

微量氟離子摻雜的高效能三閘極氮化銦鋁/氮化鎵之高介電常數金氧半高電子遷移率電晶體

方翰陞

增強式三閘極氮化銦鋁/氮化鎵高功函數高電子遷移率電晶體高介電常數蕭特基汲極延伸氟離子摻雜Enhancement-ModeTri-gateInAlN/GaNHigh work functionHigh Electron Mobility Transistor (HEMT)High-k dielectricSchottky drain extensionFluorine ion doping

10.6844/NCKU202001428 DOI

Article delay authorization/print view service Full-Text will be available on 2025/07/13

Abstract | Reference(46) Search in Library Search in Library Track Track

2

相異輕摻雜區濃度之高壓金氧半場效電晶體其熱載子可靠度模型與適用範圍之研究

陳怡婷

高壓金氧半場效電晶體比例係數輕摻雜汲極熱載子導致之退化電腦輔助設計模擬HV-MOSFETscaling factorLDDhot-carrier-induced degradationTCAD simulation

10.6844/NCKU202001164 DOI

Article delay authorization/print view service Full-Text will be available on 2025/07/01

Abstract | Reference(60) Search in Library Search in Library Track Track

3

銦摻雜氧化鎂系列電阻式記憶體之研製

吳振輝

10.6844/NCKU202001955 DOI

Article delay authorization/print view service Full-Text will be available on 2024/08/12

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4

以射頻濺鍍法製備氧化鎂銦薄膜及其光電元件應用

陳維德

氧化鎂銦紫外光檢測器薄膜電晶體光電晶體同質緩衝層MgIn2O4photodetectorthin film transistorphototransistorhomogeneous buffer layer

10.6844/NCKU202001260 DOI

Article delay authorization/print view service Full-Text will be available on 2025/07/20

Abstract | Reference(120) Search in Library Search in Library Track Track

5

鹵化物鈣鈦礦製作非揮發性電阻式記憶體之研究

龔柏元

10.6844/NCKU202002441 DOI

Article delay authorization/print view service Full-Text will be available on 2025/09/01

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6

溶膠-凝膠法合成之α-Fe2O3奈米粒子應用於晶片型氣體感測器之檢測

謝文翰

氣體感測器α-Fe2O3奈米粒子MEMS技術Sol-Gelgas sensorα-Fe2O3 nanoparticlesMEMS technologySol-Gel

10.6844/NCKU202002674 DOI

Article delay authorization/print view service Full-Text will be available on 2025/08/28

Abstract | Reference(69) Search in Library Search in Library Track Track

7

氧化鎂鎳元件與酸鹼感測器之製作與研究

黃郁翔

10.6844/NCKU202000959 DOI

Article delay authorization/print view service Full-Text will be available on 2025/06/30

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8

製備矽奈米線提高抗反射率應用於AZOY/n-Si太陽能電池之研究

謝尚儒

金屬輔助化學蝕刻矽奈米線叉指背接觸式太陽能電池MAC etchingSi nanowiresIBC solar cells

10.6844/NCKU202000926 DOI

Article delay authorization/print view service Full-Text will be available on 2025/07/01

Abstract | Reference(44) Search in Library Search in Library Track Track

9

CuInSe2蕭特基二極體與β-Ga2O3蕭特基二極體之研究

王靖宇

蕭特基二極體電鍍二硒化銅銦液相沉積法β型氧化鎵Schottky diodeCuInSe2Electrodepositionβ-Ga2O3LPD

10.6844/NCKU202000928 DOI

Article delay authorization/print view service Full-Text will be available on 2025/07/01

Abstract | Reference(48) Search in Library Search in Library Track Track

10

以射頻磁控共濺鍍法製備鎢參雜氧化銦薄膜及其光電元件應用

吳柏儒

鎢參雜氧化銦光檢測器光電晶體薄膜電晶體同質介面結構tungsten-doped indium oxide (InWO)photodetectorphototransistorthin film transistorhomojunction structure

10.6844/NCKU202000956 DOI

Article delay authorization/print view service Full-Text will be available on 2025/06/30

Abstract | Reference(110) Search in Library Search in Library Track Track

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2020年
Total 6 Pages

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