- 學位論文
A comparison study on ESD device between Human Body Model(HBM)and Transmission Line Pulse (TLP)
A comparison study on ESD device between Human Body Model(HBM)and Transmission Line Pulse (TLP)
摘要
Motivation of this research study is to compare the Electro Static Discharge (ESD) characteristics of Human Body Model (HBM) and Transmission Line Pulse (TLP) and their superiority over others. Comparison study has been tested with pre existing N-type Silicon Control Rectifier (NSCR), this has been optimized in order to achieve higher holding voltage and lower trigger voltage. 2D Medici tool has been incorporated with this research study. Mesh strategy holds a key in Medici 2D simulations, which has to be taken extra care and needs special type of mesh designing in order to avoid any convergence issues thereafter. This mesh design not only includes eliminating convergence issues, which also emphasize on achieving good doping profile with smooth curves comparatively a better device simulation. Extra care has been taken in drain, source and gate region. Optimized mesh also helps in eliminating unnecessary nodes and overall reduction in number of nodes and results in faster simulation without losing accuracy; this has been presented in this thesis. In order to begin with ESD testing Military standards MIL-STD-883 H has been incorporated to match the testing standards on par with present day industrial standards. In which the key specifications includes rise time of 7ns and continuous time of 143.6ns has been optimized for standard results, extra care has been taken to achieve KPI of lowest possible trigger Voltage ( Vt ) and maximum possible Holding Voltage ( Vh). Different available models in Medici 2D simulator has been tested along with Default model and Valdinoci Model. Under which many different parameters has been optimized in order to achieve KPI and accurate prediction with the help of simulator. Each of these models has been tested with different stress of 4 KV, 6 KV and 8KV respectively, and found out that optimized NSCR device has passed 8 KV stress, this has been the one of the major founding in this particular research. NSCR structure optimizations includes fine tuning several different parameters includes inclusion of P-Buried Layer under source which resulted in decreased trigger voltage and increase in holding voltage.
並列摘要
Motivation of this research study is to compare the Electro Static Discharge (ESD) characteristics of Human Body Model (HBM) and Transmission Line Pulse (TLP) and their superiority over others. Comparison study has been tested with pre existing N-type Silicon Control Rectifier (NSCR), this has been optimized in order to achieve higher holding voltage and lower trigger voltage. 2D Medici tool has been incorporated with this research study. Mesh strategy holds a key in Medici 2D simulations, which has to be taken extra care and needs special type of mesh designing in order to avoid any convergence issues thereafter. This mesh design not only includes eliminating convergence issues, which also emphasize on achieving good doping profile with smooth curves comparatively a better device simulation. Extra care has been taken in drain, source and gate region. Optimized mesh also helps in eliminating unnecessary nodes and overall reduction in number of nodes and results in faster simulation without losing accuracy; this has been presented in this thesis. In order to begin with ESD testing Military standards MIL-STD-883 H has been incorporated to match the testing standards on par with present day industrial standards. In which the key specifications includes rise time of 7ns and continuous time of 143.6ns has been optimized for standard results, extra care has been taken to achieve KPI of lowest possible trigger Voltage ( Vt ) and maximum possible Holding Voltage ( Vh). Different available models in Medici 2D simulator has been tested along with Default model and Valdinoci Model. Under which many different parameters has been optimized in order to achieve KPI and accurate prediction with the help of simulator. Each of these models has been tested with different stress of 4 KV, 6 KV and 8KV respectively, and found out that optimized NSCR device has passed 8 KV stress, this has been the one of the major founding in this particular research. NSCR structure optimizations includes fine tuning several different parameters includes inclusion of P-Buried Layer under source which resulted in decreased trigger voltage and increase in holding voltage.