- 學位論文
用安捷倫4156C實現On-the-fly技術
Implementation of On-the-fly Technique Using Agilent 4156C
摘要
使用一般傳統方法量測負偏壓不穩定度(NBTI)效應時，會有所謂恢復效應(recovery)，造成量測所得的pMOSFET劣化(degradation)程度較小，導致對MOSFET的劣化過於樂觀，而錯估元件的壽命。有見於此，針對減低恢復效應而衍生的on-the-fly技術，可得到較真實的劣化程度，在估算元件之可靠度時，能夠更客觀、更準確。 本研究是利用半導體參數分析儀安捷倫4156C，以軟體的方式來實現on-the-fly技術，在不添加其他儀器及軟體下，建立此量測方法，並首創延伸on-the-fly概念，考慮到應力釋放後的恢復效應，也撰寫程式來量測並探討量測結果。 在此研究中，作者以安捷倫4156C所提供的IBASIC來撰寫on-the-fly量測程式，再以NBTI測試，與一般傳統量測方法做比較，得知所開發的程式，能夠較真實的呈現較大劣化的程度。而在應力釋放後的恢復效應方面，應用所寫的程式則可得到較大的恢復，此也應較接近實際情況。 總之，使用IBASIC所開發出來的on-the-fly量測技術，可較真實的反映NBTI的劣化與恢復情況，也突破了安捷倫4156C原來量測方法的限制，這不僅可節省實驗室於量測機台上所花費的成本，更能夠使機台得到更高的使用效率！
並列摘要
There is a recovery when using traditional method to measure the NBTI effect. The recovery will affect the degradation of pMOSFETs and consequently the estimated lifetime of the devices. The on-the-fly technique is developed to reduce the effect of recovery. Therefore, more objective and accurate value of the degradation can be obtained with the on-the-fly technique. The purpose of the study is to carry out on-the-fly technique by using the Agilent 4156C without extra equipment and creating a program to measure and to analyze the recovery effect during and after stress. The program is written based on the built-in IBASIC of Agilent 4156C and then it is used to measure NBTI degradation. The measured data is then compared with the value measured with traditional measurement. The results reveal that the degradation value obtained by the program is larger and closer to real degradation. The program also helps us to find bigger effect of recovery after stress, which is also considered more realistic. Above all, the on-the-fly technique developed using IBASIC breaks the original constraint in Agilent 4156C. Therefore this technique is not only providing more realistic measurement but also reducing the cost for buying new instrument in laboratory and enhancing the efficiency of use original Agilent 4156C.