研究氣相鍺擴散於砷化鎵/砷化鋁鎵與其應用於量子井混合技術

A Study of Vapor-phase Ge Diffusion in GaAs/AlxGa1-xAs and its Applications for Quantum Well Intermixing

黃競儀(Ching-Yi Huang)

指導教授 ： 謝光前

國立清華大學/電機資訊學院/電子工程研究所/碩士(2015年)

摘要

本實驗主要探討鍺在砷化鎵/砷化鋁鎵中的擴散，並應用於進行量子井混合。首先利用封管技術製作出擴散源，使砷化鍺與砷化鎵基板表面反應生成鍺-鎵-砷的三元化合物。接著將此擴散源用於進行鍺擴散的實驗，一樣使用封管技術並添加額外的砷，在810℃下進行擴散2.5小時，於p型砷化鎵基板可達擴散深度1μm;而在810℃下退火25小時可使808nm雷射磊晶片有量子井混合的效果。若使用光激發螢光量測擴散後試片的光譜，可發現鍺是以Ge_Ga-V_Ga複合體的型式在砷化鎵中擴散，且以霍爾量測法與電化學電容電壓量測，可知鍺擴散進砷化鎵/砷化鋁鎵為n型摻雜。

關鍵字

鍺 ； 量子井混合 ； 砷化鎵 ； 砷化鋁鎵

並列摘要

The main of this thesis is the method and the characteristics of Ge diffusion in GaAs/AlxGa1-xAs, and furthermore, its applications for quantum well intermixing. First, the diffusion source is made by annealing GeAs (99.999%) powder along with GaAs substrates in quartz ampoules, which may produce Ge-Ga-As ternary compounds on the surface of GaAs substrates. Then, the diffusion source is used to perform the experiment of Ge diffusion in GaAs/AlxGa1-xAs samples from vapor phase by ampoule sealing. Besides, the excess As is also added into the ampoule to make sure that the ampoule is under the ambience of As overpressure. After annealing 2.5 hours at 810℃, the diffusion depth in p-GaAs is generally 1μm, while after 25 hours, quantum well intermixing can take place in 808nm laser structures. Ge diffusion in GaAs/AlxGa1-xAs is characterized by using photoluminescence(PL), which verifying the form of Ge diffusion in GaAs substrates is Ge_Ga-V_Ga complex, Hall measurement and electrochemical capacitor-voltage(ECV),which reconfirming Ge diffusion in GaAs/AlxGa1-xAs is n-type.

並列關鍵字

Ge ； quantum well intermixing ； GaAs ； AlGaAs

參考文獻

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