本次設計之微結構是依照國家晶片系統設計中心(National Chip Implementation Center,CIC)之製程規範做為設計之準則,並採用台積電TSMC 0.35μm 2P4M COMS-MEMS共用製程製作應用於橋墩微米紋裂縫感測之CMOS-MEMS微結構,本元件將安裝於橋墩可能產生微米級裂縫處,在橋墩遭受外力衝擊而產生微米級裂縫時,其槓桿結構會因槓桿原理而產生反向位移,使微結構之上下電極之間的重疊面積改變,因而產生了電容值的變化,藉此電容值量測微米級裂縫之寬度,再將數據轉換成電訊號,經放大電路及無線傳輸電路將警示訊號傳送出去,達到自動偵測及預警的效果。此外,為了防止微結構作動時,因所承受之外力過大而導致結構斷裂,因此在微結構中加入彈簧結構以降低元件所受到的應力。經設計,在彈簧結構之厚度為0.64μm、彈簧線寬為2μm且彈簧節數4其彈簧條數為0.1765時,可大幅降低受力,減低元件應力。此微米級裂縫感測微結構,可大幅提升感測橋墩微米紋裂縫之性能。
The design of micro structure is according to the process specification of National Chip Implementation Center. A CMOS-MEMS micro structure is applied to sensing the micron scale crack of bridge pier based on TSMC 0.35μm 2P4M COMS-MEMS common process. The components will be installed in where bridge pier may have cracks, when the bridge piers generate micron scale cracks due to external shocks. The leverage principle of the micro structure results in the reverse displacement. And that brings the changes in the overlapping area between the upper and lower electrodes of the micro structure and results in a change of capacitance. The width of the cracks is measured by measuring the capacitance. The electrical signals are sent out to achieve automatic detection and warning by using the amplifier and wireless transmission circuits. In addition, the micro structure with micro springs design prevents from being broken due to the excess external force. Spring structure can reduce the stress within the component. When the thickness of spring structure is 0.64 μm, the width is 2μm and the pitch number of spring is 4 with the spring constant 0.1765, and those make an effective decrease on the stress of the micro structure. The sensing micro structure of the micron scale crack can significantly enhance the performance of sensing cracks of the bridge pier.