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  • 學位論文

脈衝雷射對發光二極體光萃取效率之影響

Light Extraction Enhancement of Light Emitting Diodes by the Pulse Laser

指導教授 : 李有璋

摘要


本研究最主要的目的是利用脈衝雷射蝕刻製作週期性微/奈米結構在發光二極體(Light emitting diodes, LEDs)之透明導電膜(Transparent Conducting Oxide, TCO)表面,藉此,破壞內部全反射以提升發光二極體之光萃取效率。在雷射製作週期性奈米結構上,奈秒長脈衝雷射是透過表面散射波與雷射光干涉後產生波紋(Ripple)奈米結構;飛秒超短脈衝雷射則是利用表面散射波與表面電漿相互干涉後形成二次諧振波,進而產生波紋奈米結構。且雷射光束透過高斯平坦化後照射於透明導電膜上能夠大幅增加奈米波紋奈米結構的出現。在提升光萃取效率上,由於飛秒雷射的能量分佈屬於高斯曲線,製程後傷及發光二極體內部p-型氮化鎵,因此提升出光效率並不明顯,僅有上升16.36%,其順向偏壓已超過±0.1 V的誤差範圍。相對於透過高斯平坦化(Beam Shaping)後的奈秒雷射,出光效率大幅提升至24%,顯示雷射製程並未對發光二極體本身電特性有任何的影響,而在製程後發光二極體的順向偏壓仍與傳統3.029伏特幾乎相同。

並列摘要


In this study, pulsed lasers were used to fabricate micro/nano structures on the transparent conducting oxide (TCO) layers of the light emitting diodes (LEDs) to destroy the total internal reflectionat TCO/air and enhance the light extraction efficiency. The formation of laserinduced periodic surface structures (LIPSS) depends on the pulsed duration. For nanosecond laser, LIPSS was attributed to the interference of surface scattering wave and incident laser, but second harmonic wave generated from the interference of surface scattering and surface plasma induces ripples for the femtosecond laser. This study showed that light-emitting efficiency increases with surface roughness by femtosecond laser, and achieved an improvement of 16.46 %. But the forward voltage is also higher through femtosecond laser processing, meaning the laser fluence damaged the p-GaN. However, light output power enhanced to 24% and the forward voltage was not changed after nanosecond laser processing, this showed that flat-top beam of nanosecond laser was only fabricate ripple structure but not damaged the electrical property of LED.

參考文獻


[36] 王思凱, "飛秒雷射誘導奈米結構及增加氮化鎵發光二極體之發光功率", 中原大學機械工程學系碩士學位論文, 2010.
[45] 鄭仁維, "雷射劃線非晶矽及銅銦鎵硒太陽能電池之研究", 中原大學機械工程學系碩士學位論文, 2010.
[1] E. F. Schubert, "Light-emitting diodes", Cambridge, New York, pp.14-18. 2006.
[2] M. R. Krames and O. B. Shchekin, "Status and future of high-power-light-emitting diodes for solid-state lighting", Journal of Display Technology, Vol. 3, pp. 160-175, 2007.
[4] S. Nakamura, "GaN growth using GaN buffer layer", Japanese Journal of Applied Physics, Vol. 30, pp. L1705-L1707, 1991.

被引用紀錄


鄭名皓(2013)。氣體輔助CO2雷射加工發光二極體陶瓷散熱基板之研究〔碩士論文,中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu201300941

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