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The Determination of Impurity Location in A-15 Superconductor by Using EXAFS

並列摘要


The first nearest-neighboring distance of Ga impurity in A-15 compound, V75Ge20Ga5, has been obtaiued by using the EXAFS technique. From this distance and the knowledge of lattice structure, we have found that Ga impurity substitutes the Ge atom in the compound. This reasonable result has indicated the capability of EXAFS for the deter mination of the impurity location in A-15 compound.

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Tsai, M. C. (2011). 蒸汽腔體均溫板之研製與測試 [doctoral dissertation, Tamkang University]. Airiti Library. https://doi.org/10.6846/TKU.2011.00484
洪慧芬(2014)。溫度、濕熱及電極密度對聚光型太陽電池轉換效率影響之研究〔博士論文,國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2014.00105
朱培慈(2013)。X 光廣角入射矽奈米線之表面繞射研究〔碩士論文,國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2013.00129
Chang, C. L. (2010). 利用電場致發光學二倍頻研究高介電質與矽(鍺)之介面 [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2010.00336
Wu, K. Y. (2008). H3+分子離子ν2-band的精密光譜量測(Precision Measurement of the ν2-band of Triatomic Hydrogen Molecular Ion H3+) [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2008.00514

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