Analysis of Structure Fabrication on Near Field Photolithography with Experimental Verification

近場光學微影結構加工模式與實驗驗證

楊慶彬(Ching-Been Yang) ； 江新祿(Hsiu-Lu Chiang) ； 黃仁清(Jen-Ching Huang) ； 陳健忠(Chein-Chung Chen)

《中國機械工程學刊》 32卷5期 (2011/10) Pp. 371-379

https://doi.org/10.29979/JCSME.201110.0001

摘要

本文提出奈米級結構之曝光能量密度積分公式，來分析探討光阻表面之曝光能量分佈情形。其為利用加工線段加工時，在加工線段交叉區域使用積分及曝光能量累積相加的觀念，建立奈米級結構之曝光能量密度分析的方法。同時本文將光阻分割成有限節點，結合曝光能量密度積分公式及Mack之顯影模式，計算出微影加工之半高線寬（FWHM）及加工外形。由本文之研究分析，水平加工線曝光速度較慢，曝光能量較大，加工深度較深，而垂直加工線曝光速度較快，曝光能量較小，加工深度較淺。所以在近場光學微影結構加工時，控制不同曝光速度V，即可以加工出不同加工深度之結構。

並列摘要

This paper proposes the integral formula of exposure energy density during the near field photolithographic structure fabrication to investigate the exposure energy distribution of the photoresist surface. The concept of exposure energy accumulation is adopted in the cross area of the two fabrication line segments across each other and the exposure energy density formula in the near field photolithographic structure fabrication to be built. Meanwhile, the photoresist was divided into finite nodes and combines with Mack's development model and calculates the development rate after photoresist the average full-width at half maximum (FWHM) of near field photolithography and the fabrication profile. The verified testing executed in this paper to test the rationality of the near field photolithography structure fabrication model. Through the analysis of this research, parallel fabrication has a slower exposure speed, higher exposure power, and deeper depth. Perpendicular fabrications have faster exposure speed, lower exposure power, and shallower depths.Thus, controlling different exposure speeds V can produce different depths of fabrications when fabricating near field photolithography.

並列關鍵字

Near field photolithography ； Structure ； Exposure energy density ； Full-width at half maximum (FWHM)