Investigation of Bonding Energy of Morse Potential Energy of Silicon Substrate Dipped in Room Temperature Slurry

浸泡室溫研磨液之單晶矽基板的莫氏勢能結合能研究

林榮慶(Zone-Ching Lin) ； 張朝瑀(Chao-Yu Zhang) ； 趙柏棠(Bo-Tang Zhao)

《中國機械工程學刊》 40卷4期 (2019/08) Pp. 365-374

摘要

The study uses specific down force energy (SDFE) theory and the theoretical model for calculation of the thickness of chemical reaction layer, and then establish the calculation method of bonding energy D value of Morse potential energy of the single-crystal silicon affected by chemical reaction of room-temperature slurry. The study uses a smaller down force and a cutting depth within the range of thickness of chemical reaction layer to calculate the bonding energy D value of Morse potential energy of the single-crystal silicon affected by room-temperature slurry. Finally, the study uses molecular statics nanocutting model and the obtained bonding energy D value of Morse potential energy of the single-crystal silicon affected by room-temperature slurry to simulate the cutting force and down force for cutting of single-crystal silicon substrate, and then compare the simulated cutting force and down force with those under the effects of room-temperature slurry obtained from calculation by SDFE method, so as to prove the acquired bonding energy D value of Morse potential energy affected by room-temperature slurry is reasonable.

關鍵字

specific down force energy (SDFE) ； atomic force microscopy (AFM) ； single-crystal silicon substrate ； bonding energy of Morse potential energy ； room temperature slurry

並列摘要

本文以比下壓能理論及計算化學反應層厚度理論模式，建立受室溫研磨液化學反應影響之單晶矽莫氏勢能之結合能D值的計算方法。本文先用較小的下壓力計算在化學反應層內所得受室溫研磨液影響之單晶矽莫氏勢能結合能D值。最後用所得之D值及分子靜力學奈米切削模式模擬切削具有受室溫研磨液影響的單晶矽基板的切削力與下壓力，並與比下壓能法計算所得之受室溫研磨液影響的切削力與下壓力作比較，以驗證所得之受室溫研磨液影響之莫氏勢能的結合能D值為合理。