以常壓式化學氣相沉積法成長矽量子點發光二極體之特性研究

The characteristics of Si quantum-dots LED by atmospheric-pressure halide chemical vapor deposition

陳彥文(Yen-Wen Chen)

指導教授 ： 溫武義

中原大學/工學院/電子工程研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600488

摘要

摘要
以目前的矽量子點發光二極體而言，要如何提高元件的外部量子效率和降低我們元件所需的起始電壓是目前各個研究團隊所欲突破的問題，尤其如何成長出品質較佳且含有矽量子點的薄膜亦是本研究關鍵的課題。本實驗係採用自組式之常壓式化學氣相沉積系統成長非當量組成之SiOx 薄膜而Si和O之反應氣體源分別為SiH2Cl2及N2O，
其成長溫度在950-975℃之間，另外，所使用的承載氣體為氮氣，首先我們改變SiH2Cl2及N2O之流量比，我們發現在SiH2Cl2流量固定下，N2O流量^加會導致PL光譜呈現藍位移的現象，換言之，量子點尺寸隨著N2O流量增加而減小，再者，若將非當量組成之SiOx 薄膜在不同的溫度下退火，對於PL光譜亦有明顯的影響。另外 此非當量組成之SiOx 薄膜的電阻值很大，因此為提升其導電度，我們將分別導入0,5,10及15 sccm之CBr4。在實驗的另外一部分，我們以n型的多晶型氮化戍@為元件的窗戶層，利用鈦/金/鎳/金四層金屬系統與氮化戍峖迅怢峈獐琠i接觸電極，在元件的結構和製程步驟上的改進，我們也用了不同的方式來降低漏電流，希望藉這些一連串實驗的探討來提高元件的外部量子效率。

關鍵字

氮化鎵薄膜 ； 發光效率 ； 常壓式化學氣相沉積 ； 矽量子點發光二極體

並列摘要

Abstract
For present silicon quantum-dots LEDs, to improve the external quantum efficiency and lower the threshold voltage of the device is a common challenge for every research team, especially grow the best film that silicon quantum dots embedded in it. So the quality of this film plays a critical role. In my experiment, the Non-stoichiometric silicon oxide (SiOx, x ≠ 2) films were deposited at 950-975℃ and in N2 environment by home made atmospheric-pressure halide chemical vapor deposition using SiH2Cl2 and N2O as the source materials. First, we change the flow rate ratio of SiH2Cl2 and N2O. When the flow rate of SiH2Cl2 was fixed and the flow rate of N2O was increased. We could observe blue shift in the spectrum of PL. On the other hand, the size of silicon QD was decreased with the flow rate of N2O was increased. Furthermore, the non-stoichiometric silicon oxide (SiOx, x ≠ 2) films were annealed in different temperature, the spectrum of PL was affected by annealing obviously. Besides, the resistivity of the non-stoichiometric silicon oxide (SiOx, x ≠ 2) films was high, therefore in order to improve the conductivity. We introduced into the flow rate of CBr4. , and its flow rate was 0, 5,10, 15 sccm, respectively. The n-type poly-GaN was the other topic in this work. We examine the conditions for obtaining low resistive contact to n-type poly-GaN using Ti/Au/Ni/Au multilayer metal system, and we want to grow it on the SiOx film for the window layer to improve the external quantum efficiency of the device.

並列關鍵字

Si quantum-dots LED ； SRO ； Atmospheric-pressure halide chemical vapor deposition

參考文獻

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