P型砷化鎵鎳/鈀/金歐姆接觸特性研究與在共振腔發光二極體之應用

Study on the Ni/Pd/Au ohmic contacts to p-GaAs and application to resonant-cavity light-emitting diodes (RCLED)

張凱程(Kai-Cheng Chang)

指導教授 ： 廖森茂 ； 吳志宏

中原大學/工學院/電子工程研究所/碩士(2004年)

https://doi.org/10.6840/cycu200400131

摘要

本論文中先從探討Ni及Pd的厚度對於Ni/Pd/Au/p-GaAs以及Ni/Au/p-GaAs中Ni的厚度變化其歐姆接觸之影響，尋求最佳的Ni和Pd的厚度導致最低的特徵阻值。首先利用TLM求得Ni/Pd/Au金屬材料在P型砷化鎵的特徵阻值，其中發現當Ni及Pd的厚度分別由25nm及50nm增加到80nm及120nm時，其特徵阻值降到最低，且退火溫度也隨之下降。緊接著，將具有最低特徵阻值的歐姆接觸(亦即Ni (80nm)/ Pd (120nm)/ Au (250nm))做為650nm紅光共振腔發光二極體(RCLED)的電極，並藉由I-V、L-I、Electroluminescence(EL)以及不同溫度下變化的I-V、L-I和頻寛調變(modulation bandwidth)的量測，來探討Ni/Pd/Au材料應用於元件上之後的元件特性。

關鍵字

歐姆接觸 ； 鎳鈀金 ； 耦合頻寛 ； 共振腔發光二極體

並列摘要

In this dissertation, we discussed the effects of the thickness of the Ni and Pd on the Ni/Pd/Au contact and of the Ni on the Ni/Au contact to p-GaAs in the beginning. Then, we sought for the optimum thickness of the Ni and Pd layer and for the lowest specific contact resistance. The specific contact resistance of the Ni/Pd/Au materials on p-GaAs was determined by transmission line method (TLM). As increasing the thickness of the Ni and Pd layer from 25nm and 50nm to 80nm and 120nm,respectively, the specific contact resistance attained to the lowest value and the annealing temperature also reduced. Sequentially, we applied the optimum Ni (80nm)/ Pd (120nm)/ Au (250nm) layers onto positive electrode of the 650nm red resonant-cavity light-emitting diode (RCLED). Then, the I-V, L-I, Electroluminescence (EL) as well as temperature dependence of I-V and L-I characteristics, and modulation bandwidth were measured hence to discuss the performances of the devices after growing the Ni/Pd/Au materials onto the devices.

並列關鍵字

RCLED ； modulation bandwidth ； Ni/Pd/Au ； ohmic

參考文獻

[1] 陳曉民“質子佈植對砷化鎵材料以及發光二極體應用之研究”私立中原大學電子所碩士學位論文(2003)

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