寬型波導結構量子井半導體雷射特性之研究

Quantum Well Semiconductor Laser Characteristic with Broad-Waveguide Structure

陳宏哲(Hung-Che Chen)

指導教授 ： 吳志宏 ； 廖森茂

中原大學/工學院/電子工程研究所/碩士(2005年)

https://doi.org/10.6840/cycu200500121

摘要

本論文主要探討具有寬型波導結構的高功率量子井雷射二極體的元件特性，包括在製程處理後之雷射二極體的各種不同特性的量測及理論分析。
在實驗方面,首先對於雷射的基本特性之量測分析與不同脊狀波導的寬度、共振腔長度雷射之探討，其次並探討環境溫度對雷射二極體特性表現的影響，如：起始電流、外部差動量子效率。然後使用三氧化二鋁為鏡面蒸鍍材料利用電子槍蒸鍍法形成鏡面薄膜，分析不同三氧化二鋁厚度對雷射二極體鏡面的反射率與起始電流之影響。最後對雷射光二極體做極化特性分析，然後將所有相關特性分析綜合來探討具有寬型波導結構的量子井半導體高功率雷射之優缺點。

關鍵字

起始電流 ； 半導體雷射

並列摘要

In this thesis, the main topic would be discussed that analyzed the characteristic of the high power quantum wells laser diode with broad-waveguide structure. It included different characteristic of the device and the analysis of the theorem for laser diodes.
In the side of the experiment, the first, the basic characteristics were measured and analyzed for laser. In addition, the different strip width and cavity length laser were discussed. Then, the behavior of the characteristic was probed into that temperature of environment affected laser diodes. Go on, the Al2o3 thin-film was evaporated on the laser mirror facet by E-gun. Reflectance and threshold current were affected by Al2o3 thickness for laser diodes facet. In the last part of this study, we analyzed the polarization property of laser diodes. Finally, the advantage and the fault were considered that related with all of characteristics for the high power quantum wells laser diode with broad-waveguide structure.

並列關鍵字

semiconductor laser ； threshold current

參考文獻

[1] 張凱程, “P型砷化鎵鎳/鈀/金歐姆接觸特性研究與在共振腔發光二極體之應用” 私立中原大學電子所碩士學位論文(2004)

[2] 陳家忠, “980nm高功率泵激雷射二極體之研究”私立中原大學電子所碩士學位論文(2002)

[4] David wood, “Optoelectronic Semiconductor Devices”, P.130

[5] David wood, “Optoelectronic Semiconductor Devices”, P.135~137

[6] Peter S. Zory, Jr., “QUANTUM WELL LASERS”, P.9~10