質子佈植對砷化鎵材料以及發光二極體應用之研究

Investigation of GaAs materials and LED application with proton implantation

陳曉民(Hsiao-Min Chen)

指導教授 ： 吳志宏 ； 廖森茂

中原大學/工學院/電子工程研究所/碩士(2003年)

https://doi.org/10.6840/cycu200300317

摘要

中文摘要
近年來在化合物半導體製程中已證實，質子衝擊法(proton bombardment)已被有效使用來將一導電層轉換為一高阻值的絕緣層。主要是因為自由載子會被質子佈植所造成的缺陷(defect)或相關的深層能階(deep level)所捕捉，而這個製程技術在1970年首次被引用，一直到目前質子衝擊法應用的範圍極廣，例如HBT、HEMT、VCSEL、RCLED、導波器以及SOI system。而本研究重點就在於探討質子佈植對於p-GaAs 材料以及LED發光元件特性的影響。
本實驗從材料特性分析和元件應用印證雙方面著手，從材料的準備、元件的結構、製程步驟、量測方式、直到結果的分析與討論，本論文全都完整呈現。另外，本研究也比較不同的摻雜及不同的結構其特性去做分析以求得其中最佳的條件。而從實驗結果也可以發現質子佈植的劑量(dose)、能量、熱回火的溫度和半導體材料的摻雜物(dopant)為其保持高電阻值和高熱穩定度之重要成分；而紅外線發光二極體經過歐姆接面保護後再經由質子照射，我們發現利用熱退火處理過後，與一般製程的紅外線發光二極體相較之下，紅外線發光二極體經過歐姆接面保護後再經由質子照射在I-V和P-I的特性表現上都獲得相當多的改善。而質子佈植技術我們僅只是透過上述的探討去找
出最佳的條件，仍然有很大的研究空間需要我們去持續發現與研究在未來的工作上。

關鍵字

質子佈植 ； 砷化鎵 ； 發光二極體

並列摘要

Abstract
Recently, ion implantation has been used for GaAs integrated circuits and microwave devices to produce electrically isolated layers. With the implantation isolation technique, free carriers are compensated by either irradiation-induced damage or related deep levels. This compensation or carrier removal technique was first applied in the 1970s, and is now not only used for HBT, HEMT, VCSEL, RCLEDs, and waveguides but also for SOI system. Due to the above applications, more and more research reports about proton implantation technique have been published. This study is concerned on the influence of the proton implantation to the GaAs materials and the GaAs/GaAs homojunction LEDs.
This work is carried out from both aspects of material analysis and practical device process. The research contents include the preparation of the material, the device structure, the fabrication process of the device, the measurement of LED characteristics, and finally the analysis of the experimental results, which have been executed sequentially. In additional, it is analyzed to gain the optimal conditions by different dopant and different fabrication process. On the other hand, the implantation flux, implantation energy, thermal annealing temperature, and the dopant of the semiconductor material, which are the most important factors to affect the performance of high sheet resistance and high thermal stability. Besides, it has been found that after thermal annealing the irradiated LEDs with protected ohmic contact have better
IV.
I-V and P-I performances than the general fabrication LEDs and the irradiated LEDs with unprotected ohmic contact. However, the optimal conditions for the above techniques are still not clarified and needed to be determined in the following work.

並列關鍵字

proton implantation ； LED ； GaAs

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