離子濺鍍法成長矽碳氮薄膜及其機械性質研究

Ion Beam Sputtered Growth and Mechanical Properties of SiCN Films

王春田(C. T. Wang) ； 馬廣仁(K. J. Ma) ； 陳貴賢(K. H. Chen) ； 柯琪(L. C. Chen) ； 林麗瓊(P. D. Kichambare)

《材料科學與工程》 33卷1期 (2001/03) Pp. 38-43

https://doi.org/10.6409/JMSE.200103.0038

摘要

本研究以氮離子束(Ion Beam Sputtering Beposition, IBSD)濺射SiC靶材，並外加輔助氮原子源，分別於常溫及高溫(500℃)在矽基板上成長SiCN薄膜，本實驗利用X光光電質譜儀(electron spectroscopy for chemical analysis, XPS)、高解析度穿透式電子顯微鏡(HRTEM)\平面干涉儀(Moir'e interferometer, MI)、毫微米壓痕器(Nano-indentation)等儀器進行分析非晶態SiCN薄膜之組成及其化學鍵結、殘留應力、繒性模數及硬度。實驗結果得知；外加輔助的氮離子源非常有的提高了矽碳氮薄膜之氮韽一，並有助於提高薄膜之彈性模數及硬度，退火溫度在150℃即可降低矽碳氮薄膜之殘留壓應力。

關鍵字

毫微米壓痕 ； 殘留壓應力 ； 外加輔助的氮離子源

並列摘要

The thin films of SiCN were prepared at room temperature and 500℃ respectively by ion beam sputtering deposition (IBSD) method using SiC target and N2 as atom source. In order to improve the nitrogen content in the SiCN film, an additional nitrogen gas from a separate source was introduced in the IBSD assembly. These films were then analysised by XPS and HRTEM. The residual stress was measured by Moir'e interferometer, nano-indentation technique was used to determine the elastic modulus and hardness of SiCN films. It was observed that a higher nitrogen content in SiCN films enhanced of the elastic modulus and hardness of the films. While annealing these films at 150℃, the residual stress of the film decreases.

並列關鍵字

Nano-indentation ； Residual stress ； N atom source