電子槍蒸鍍鋁摻雜氧化鋅及其應用在半導體光電元件之研究

Study of E-gun-deposited AZO and its applications to semiconductor optoelectronic devices

陳建名(Chien-Ming Chen)

指導教授 ： ARRAY(0xa57b22c)

中原大學/工學院/電子工程研究所/碩士(2010年)

https://doi.org/10.6840/cycu201000378

摘要

在本論文中，首先鋁摻雜和未摻雜氧化鋅分別經由電子束蒸鍍方法沉積在玻璃基板上，並且在氮氣環境下遵循回火製程去分析光和電特性。爾後鋁摻雜氧化鋅或未摻雜氧化鋅被擇一應用在雙接面太陽能電池和紅外線發光二極體，並觀察二者的應用可行性。
未摻雜的氧化鋅不被選擇作為合適的材料，由於他們高的電阻率，儘管在回火溫度350℃持續3分鐘有理想的穿透率。然而回火到300℃持續3分鐘，160nm和250nm的鋁摻雜氧化鋅可以達到超過80%的穿透率，回火升到350℃且持續3分鐘時，較厚500nm和800nm的鋁摻雜氧化鋅可以達到超過70%的穿透率及最低的電阻率5.16×〖10〗^(-4) Ω-cm，當有800nm較厚鋁摻雜氧化鋅回火到300℃持續3分鐘，得知平滑的表面可以經由合適的回火溫度獲致，並且晶粒大小也隨著鋁摻雜氧化鋅的厚度增強而變大。
在鋁摻雜氧化鋅的光電特性量測之後，透明導電鋁摻雜氧化鋅層分別被蒸鍍在雙接面太陽能電池和發光二極體上。我們發現在一個標準太陽光下，蒸鍍鋁摻雜氧化鋅的雙接面太陽能電池元件性能迅速被降低。然而在聚光下，蒸鍍100nm鋁摻雜氧化鋅的雙接面太陽能電池從16.30% 被提升到 16.38%。此外，蒸鍍鋁摻雜氧化鋅的發光二極體有較佳的電流電壓特性，並且在較高電流時，比起未蒸鍍鋁摻雜氧化鋅的發光二極體有較大的輸出功率。

關鍵字

氧化鋅 ； 雙接面太陽能電池 ； 發光二極體

並列摘要

In this thesis, both the Al-doped and undoped ZnO films were deposited onto the glass substrates via the electron-beam evaporation method and then followed by an annealing process in N2 ambient to analyze the optical and electrical characteristics. Afterward, either AZO or undoped ZnO was chosen to apply to DJ solar cells and IR LEDs and furthermore to observe their application feasibilities.
The undoped ZnO film is not chosen as the appropriate materials due to its higher resistivity whereas with ideal transmittance T% at annealing temperature 350℃ for 3min.The T% of AZO film with two thin films of 160nm and 250nm were obtained more than 80% after annealing at 300℃ for 3min and the improved T% of AZO two thicker films of 500nm and 800nm were also achieved over 70% after annealing at 350℃ for 3min. The lowest resistivity ρ =5.16×〖10〗^(-4) Ω-cm was obtained for 800nm AZO film at annealing temperature 300℃ for 3min. In addition, we found that a smoother surface was observed via suitable annealing condition and the crystalline sizes were increased with increasing AZO film thickness.
After the measuring the optical and electrical characteristics, the transparent conducting AZO layers were evaporated individually on DJ solar cells and IR LEDs. We also found that the performance of DJ solar cells was remarkably degraded under one-sun illumination. However, the conversion efficiency of DJ solar cells was slightly increased from 16.30% to 16.38% thus with 100nm AZO-contact under a concentrated sunlight illumination. Besides, the LEDs contacted with AZO were demonstrated better I-V characteristics and higher output power at high level of current injection.

並列關鍵字

AZO ； DJ SOLAR CELL ； LED

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