Properties and Chemical-Mechanical Polishing Characteristics of Low Dielectric Constant Polymer Films:PAE-2 and Flare 2.0

低界電常數高分子（PAE-2及Flare2.0）薄膜性質及其化學機械研究磨特性

陳文章(Wen-Chang Chen) ； 顏誠廷(Cheng Tyng Yen) ； 戴寶通(Bau-Tong Dai) ； 蔡明蒔(Ming-Shih Tsai)

《Journal of the Chinese Institute of Chemical Engineers》 31卷3期 (2000/05) Pp. 253-260

https://doi.org/10.6967/JCICE.200005.0253

摘要

本研兩種低介電常數高分子材料（PAE-2及Flare2.0）之薄膜性質及其化學機械研磨特性。首先分析高分子薄膜之分子結構，熱應力性質及介電常數。其次中分子結構之剛硬性。不同研磨粉末（SiO2及Al2O3）及兩種界面活性劑（Triton X-100及DSSS）探討薄膜化學機械研磨速率及研磨表面性質。實驗結果顯示薄膜機性質，粉末硬度，研磨液pH值及界面活性劑對薄膜化學機械研磨特性有重要影響。Flare2.0因較PAE-2之擁有較剛硬結因此研磨速率較低小。所使Al2O3粉末硬度較SiO2大而增加研磨速率。研磨液pH值及界面活性劑則影響粉末與高分子之接觸面及電荷吸斥力進而影響研磨速率。

並列摘要

In this article, the film properties and chemical-mechanical polishing (CMP) characteristics of two different low dielectric constant poly (arylene ethers): PAE-2 and Flare 2.0 were studied. The molecular structure, thermal-stress properties, and dielectric constant of the polymer films were characterized. The removal rates and surface properties of the polished films were investigated by the following parameters: structural rigidity, types of abrasives, and various. The mechanical properties of polymer films, the abrasive hardness and surfactant affected significantly mechanical properties of polymer films, the abrasive hardness and surfactant affected significantly the CMP characteristics. The mechanical property of the PAE-2 film was inferior to the Flare 2.0 film and thus a higher polishing rate was found for the PAE-2 film than the Flare 2.0 film. The order of the removal rates for both polished films was 8105 ＞ 8104 ＞ SS-25 , which was the same trend as the hardness of the abrasive. The addition of surfactants into the slurries significantly modified the surface contact area and the electrostatic force between the abrasive and the polymer film. Therefore, the polishing rate was affected by surfactants.

並列關鍵字

CMP ； Low k Polymers ； Slurry ； Abrasive ； Surfactant