高溫材料熱膨脹特性之X-射線繞射測定

Study on The Behavior of Thermal Expansion of Al_2O_3, MgO and SiO_2 by X-Ray Diffraction

蕭濱鎮(Bin-Jenn Shaiu) ； 林諭男(I-Nan Lin)

《鑛冶：中國鑛冶工程學會會刊》 26卷3期 (1982/09) Pp. 86-96

https://doi.org/10.30069/MM.198209_26(3).0010

摘要

利用X-射線繞射法測定AI_2O_3，MgO及SiO_2在各溫度之晶型變化情形，並由此得知在各種溫度時之線膨脹係數，以作為高溫材料在成品製作之設計時或使用時之參考。實驗結果顯示MgO及AI_2O_3在高溫下有Schottky Defect產生。同時，AI_2O_3的熱膨脹具有異向性。本文並就「直接法」及「外差法」的不同加以討論；X-光射線之實驗數據以Fortran程序設計加以分析，精確可靠。

並列摘要

The coefficient of thermal expansion of AI_2O_3, MgO and SiO_2 are determined accurately at different temperatures by using an X-Ray diffractometer and a specially designed furnace. Equations are given for the variation of the lattice constants with temperature. The temperature dependence of the thermal expansion of MgO and AI_2O_3 at high temperature is shown to be related to the concentration of thermally generated Schottky defects. Besides, the thermal expansion coefficient of AI_2O_3 is shown to be anisotropic.