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不同摻雜量對微波燒結法製備Sr2SiO4:Eu^3+螢光粉之微結構與發光特性之影響

Effect of Eu Doping Concentrations on Micro-Structure and Optical Properties of Sr2SiO4: Eu^3+ Phosphor Prepared Using Microwave Sintering Method

摘要


本文以微波燒結法製備Sr2SiO4摻雜Eu^3+之螢光粉,並討論不同摻雜量(Sr2-xSiO4: xEu^3+, x=0.05, 0.1, 0.2, 0.3,)對其微結構與發光特性之影響。燒結溫度為1200℃,並持溫60min,在空氣氣氛下進行燒結,最後以自然爐冷方式冷卻。本實驗主要的分析係使用掃描式電子顯微鏡(Scanning Electron Microscope, SEM)、X-光粉末繞射儀(X-ray Diffraction, XRD)、光致發光光譜儀(Photoluminescence Spectrum, PL)探討其微結構與光學特性。本實驗結果由SEM觀察得知,銪含量x=0.1時,於燒結溫度1200℃下燒結所得之Sr2SiO4:Eu^3+螢光粉其粉末晶粒尺寸較大。在XRD分析下,皆無二次相的形成,為α-Sr2SiO4正交晶體,顯示銪摻雜量的多寡皆不會造成主體晶格的變化。其中,光致發光光譜儀係以λex= 395 nm作為入射激發光源(Excitation),可於617nm的波長處產生明顯的放射光譜(Emission)。當銪含量x=0.1時,於燒結溫度1200℃下燒結所得之Sr2SiO4:Eu^3+螢光粉可得到最佳之發光強度。

關鍵字

螢光粉 光致發光 LED 微波加熱法

並列摘要


In this paper, Sr2SiO4 phosphors doped with Eu^3+ (x= 0.05, 0.1, 0.2, 0.3) to substitute Sr^3+ element were synthesized by microwave sintering at 1200°C for 60 min in air. Scanning electron microscope (SEM), X-ray diffraction (XRD), and photoluminescence spectrum (PL) were utilized to analyze the micro-structure and optical properties. SEM imaging showed that the grain size of phosphor powder was larger when the doped Eu^3+ concentration was 0.1 (x=0.1). X-Ray diffraction analysis showed that the phosphors in the present study were orthorhombic structure indicating that the amount of doped europium does not change the main lattice. When λex= 395 nm, the emission spectrum was evident at the 617 nm indicating that Sr2SiO4 doped with Eu^3+ (x=0.1) had good emission intensity.

被引用紀錄


趙賢文 (2014). 微波材料處理及加熱機制之探討 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2014.00056
Chen, Y. R. (2013). 離子化合物在微波場中的熔點下降現象 [master's thesis, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2013.00502
Yu, W. M. (2012). 利用頻域技術對差動彎曲微帶線的相位差之補正 [master's thesis, Tatung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0081-3001201315113579

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