Electromigration Mechanisms in Thin Film Conductors

黃暉理(H. L. Huang) ； 張啟陽(Chi-Yang Chang)

《Chinese Journal of Physics》 11卷1期 (1973/04) Pp. 18-32

並列摘要

A semi-phenomenological theory illustrated with recent experimental results is presented to explain the electromigration failure modes as appear in thin film conductors in the integrated circuitry. If we allow local variation in mass fluxes, grain sizes and grain boundary (GB) diffusion activation energies we demonstrate the existence of the mathematical solutions of three main types of failure modes: a fine crack type followed immediately by mass accumulation of equal amount, a wide and extended void type followed with little amount of mass pile-up and, in superposition with the GB diffusion of the thermal origin, the astounding mass growth type as observed by Rosenberg and co-workers, all in good agreement with the known experimental observations. Finally, a brief discussion is made in relation to the local variation in GB diffusion activation energies, void morphology and stripe lifetime distribution.