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Transport Mechanisms in n-Type Porous Silicon Obtained by Photoelectrochemical Etching
並列摘要
The electrical conduction properties of metal/porous silicon/n-Si/metal have been investigated using current-voltage (I-V) measurements. The characteristics for all devices show a rectifying behavior with ideality factor close to unity. A value of 0.79 eV for the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics.
並列關鍵字
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延伸閱讀
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