Study and Design of a Fast 5KV Transistor Switch

一種工作於五仟伏特的高速電晶體式切換器之研究及設計

賴柏洲(Po-Chou Lai) ； 朱彥魁(Yen-Kuei Chu)

《技術學刊》 25卷2期 (2010/06) Pp. 107-112

https://doi.org/10.29507/JT.201006.0002

摘要

今日有許多裝置針對脈衝重複頻率(PRF)調變所發展並工作於脈衝形成網(PFN)[1]。本文係探究一種新型運用金氧半場效電晶體(MOSFET)所研製之能工作於高電壓中高速電晶體式切換器，其適用於PRF電路。此型切換器高速動作有別於其他型式（如：使用絕緣閘雙極型電晶體，IGBT）[2, 3]，並對PRF具有三種主要優勢。首先能工作於極高電壓的環境（如：越五千伏特）。其次是具有極佳的運作效率（如：高速切換效能）以改善電晶體效益。再者有廣泛的運用，如：生物科技（如：質譜儀，核磁共振儀），軍事（如：PRF雷達系統），電器工程（如：雷射系統）等。

關鍵字

脈衝形成網PFN ； 脈衝重複頻率PRF ； 金氧半場效電晶體MOSFET ； 絕緣閘雙極型電晶體IGBT

並列摘要

There are many kinds of devices operation in Pulse Forming Networks (PFNs) using high Pulse Repetition Frequency (PRF) modulation today [1]. This paper is going to discuss a novel fast high voltage transistor switch utilizing Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) suitable for use in PRF circuits. The switching performance of this fast high voltage transistor switch is faster than other switches (e.g. IGBT, Insulated Gate Bipolar Transistor etc.) [2,3]. There are three major benefits to PRF from this device. The first is that it operates at very high voltage (e.g. over five kilovolts, 5 kV). The second is improved transistor performance, with excellent operating parameters (e.g. fast output transition time, pulse width). The third is a wide range of applications, such as in biotechnology (e.g. Mass Spectrometry, Nuclear Magnetic Resonance), military (e.g. PRF radar systems), and electrical engineering (e.g. laser systems) etc.

並列關鍵字

pulse forming network ； pulse repetition frequency ； metal oxide semiconductors field effect transistor ； insulated gate bipolar transistor