工作於一萬五仟伏特的新型高速固態切換器之研究及設計

Study and Design of a Novel High Speed Solid-State Switch Operated at 15kV

朱彥魁(Yen-Kuei Chu)

指導教授 ： 賴柏洲

國立臺北科技大學/電資學院/電子電腦與通訊產業研發碩士專班/碩士(2009年)

摘要

今日有許多裝置針對脈衝重複頻率(PRF)調變所發展並工作於脈衝形成網(PFN)。本論文係探究一種新型運用金氧半場效電晶體(MOSFET)所研製之能工作於高電壓中之高速固態切換器，其適用於PRF電路。此型切換器高速動作是穩定且速度優於其他型式(如:使用絕緣閘雙極型電晶體，IGBT)，並對PRF具有三種主要優勢。首先能工作於極高電壓的環境(如:上一萬五千伏特)。其次是具有極佳的運作效率(如:高速切換效能)以改善電晶體效益。再者能廣泛運用於通訊、軍事或太空科學(如: PRF雷達系統) ，生物醫學科技(如:質譜儀、核磁共振儀)及電器工程(如:雷射系統)等。

關鍵字

脈衝重複頻率 ； 脈衝形成網 ； 金氧半場效電晶體 ； 高速固態切換器 ； 絕緣閘雙極型電晶體。

並列摘要

There are many kinds of devices operating at Pulse Forming Networks (PFNs) for high Pulse Repetition Frequency (PRF) modulation today. This thesis is going to discuss a novel high speed solid-state switch utilizing Metal Oxide Semiconductors Field Effect Transistors (MOSFETs) suitable to use in PRF circuits. This switch is more stable and compared to the others (e.g. utilizing IGBT, Insulated Gate Bipolar Transistor etc.) is faster. There are three major benefits to PRF from this device. The first is operated in extreme ultra-high voltage (e.g. over fifteen kilo voltage, 15kV). The second is improved transistor performance, with excellent operating parameters (e.g. fast output transition time, pulse width). The third is a wide range of applications in communication, military or space science (e.g. PRF radar systems), biotechnology (e.g. Mass Spectrometry, Nuclear Magnetic Resonance) and electrical engineering (e.g. laser systems) etc.

並列關鍵字

Pulse Forming Networks ； Pulse Repetition Frequency ； High Speed Solid-State Switch ； Metal Oxide Semiconductors Field Effect Transistor ； Insulated Gate Bipolar Transistor.

參考文獻

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[2] J. W. Baek et al., “High voltage switch using series-connected IGBTs with simple auxiliary circuit,” in Proc. Industry Applications Conf. (IAC2000), NJ, USA, Oct. 2000, pp. 2237 – 2242.

[3] C. Gester, “Fast High-power / High-voltage Switch Using Series-connected IGBTs with Active Gate controlled Voltage-balancing,” in Proc. IEEE-APEC Conf. Rec., 1994, pp. 469-472.

[4] J. Sigg et al., “The Series Connection of IGBTs Investigated by Experiments and Simulation,” in Proc. IEEE-PESC Conf. Rec., 1996, pp. 1760-1765

[5] A. Consoli et al., “Active Voltage Balancement of Series Connected IGBTs,” in Proc. IEEE-IAS Conf. Rec., 1995, pp. 2752- 2758.