銅在化學－機械拋光電解液中之電化學性質研究

Electrochemical Behavior of Copper in Chemical-Mechanical Polishing Slurries

林秀如(Shiou-Ru Lin) ； 陳瑞琴(Jui-Chin Chen) ； 蔡文達(Wen-Ta Tsai)

《防蝕工程》 17卷2期 (2003/06) Pp. 103-112

https://doi.org/10.6376/JCCE.200306.0103

摘要

The electrochemical behavior of copper in citric acid solution and surface morphology after CMP (Chemical-Mechanical Polishing) were investigated. The addition of hydrogen peroxide in the range of 0~12 vol.% would cause an increase in the corrosion potential of copper from-40 to 470mV (vs SCE)in citric acid solution. The dependence of corrosion rates on the concentration of hydrogen peroxide, in terms of corrosion current density measured by Tafel extrapolation and dissolved metallic ion concentration measured by ICP were all consistent. The results showed that the corrosion rate increased with the concentration of hydrogen peroxide in the range of 0~6vol.%, while it decreased beyond 6vol.%.Under the conditions simulating CMP processes, the experimental results showed that the metal removal rate of copper could be greatly increased with the addition of hydrogen peroxide. Examination of surface morphology using atomic force microscope (AFM) also revealed that the presence of hydrogen peroxide could cause a significant reduction in surface roughness of copper chemical-mechanically polished in citric acid solution.

關鍵字

銅 ； 電化學行為 ； 雙氧水 ； 化學—機械拋光

並列摘要

The electrochemical behavior of copper in citric acid solution and surface morphology after CMP (Chemical-Mechanical Polishing) were investigated. The addition of hydrogen peroxide in the range of 0~12 vol.% would cause an increase in the corrosion potential of copper from-40 to 470mV (vs SCE)in citric acid solution. The dependence of corrosion rates on the concentration of hydrogen peroxide, in terms of corrosion current density measured by Tafel extrapolation and dissolved metallic ion concentration measured by ICP were all consistent. The results showed that the corrosion rate increased with the concentration of hydrogen peroxide in the range of 0~6vol.%, while it decreased beyond 6vol.%.Under the conditions simulating CMP processes, the experimental results showed that the metal removal rate of copper could be greatly increased with the addition of hydrogen peroxide. Examination of surface morphology using atomic force microscope (AFM) also revealed that the presence of hydrogen peroxide could cause a significant reduction in surface roughness of copper chemical-mechanically polished in citric acid solution.

並列關鍵字

copper ； electrochemical behavior ； hydrogen peroxide ； chemical-mechanical polishing(CMP)