銅摻雜氧化鎳薄膜之製備及性質研究

Study on the preparation and properties of NiO:Cu films

謝汶珈(Wen-Jia Hsieh)

指導教授 ： 陳國駒

義守大學/理工學院/材料科學與工程學系/碩士(2018年)

摘要

本實驗利用射頻磁控濺鍍系統於康寧XG基板上沉積銅摻雜氧化鎳薄膜。藉由改變基板溫度(RT、200℃、300℃、400℃、500℃)、氬氧氣氛比(100%、60%、40%、0%)、不同的銅摻雜量(1%、4%、8%、10%)以及不同濺鍍時間(5、20分鐘)，探討其對氧化鎳薄膜之性質影響。
實驗結果顯示，在製備純氧化鎳薄膜時於基板溫度400℃下的全氧氣氛中，得到氧化鎳薄膜其可見光區平均穿透為46.35%，光學能隙達3.6eV，電阻率為3.51Ω-cm，載子遷移率3.11cm2/V.s，載子濃度則為5.71×1017cm-3。
隨後經過不同的銅摻雜量不同濺鍍時間的參數測試，最後在基板溫度為500℃的全氧氣氛中，氧化鎳薄膜在摻雜量為8%銅時濺鍍五分鐘，得到穿透率為57.19%，而電阻率為2.387Ω-cm，而光電品質因子為7.84×〖10〗^(-9)。

關鍵字

氧化鎳摻雜銅 ； 薄膜 ； 光性 ； 電性

並列摘要

In this experiment, a copper-doped nickel oxide film was deposited on a Corning XG substrate using a radio frequency magnetron sputtering system. By changing the substrate temperature (RT, 200 ° C, 300 ° C, 400 ° C, 500 ° C), argon-oxygen atmosphere ratio (100%, 60%, 40%, 0%), different copper doping amount (1 %, 4%, 8%, 10%) and different sputtering time (5, 20 minutes), to explore its effect on the properties of nickel oxide film.
The experimental results show that in the preparation of pure nickel oxide film in the all-oxygen atmosphere at a substrate temperature of 400 ° C, the average penetration of the visible light region of the nickel oxide film is 46.35%, the optical energy gap is 3.6 eV, and the resistivity is 3.51 Ω- cm, the carrier mobility was 3.11 3.11cm2/V.s, and the carrier concentration was 5.71×1017cm-3。
Subsequently, the parameters of different sputtering times of different copper doping times were tested. Finally, in an all-oxygen atmosphere with a substrate temperature of 500 ° C, the nickel oxide film was sputtered for five minutes at a doping amount of 8% copper to obtain transmittance is 57.19%, and the resistivity is 2.387 Ω-cm, and the photoelectric quality factor is 7.84×〖10〗^(-9)。

並列關鍵字

Copper-doped nickel ； Thin film ； Electrical ； Transmittance

參考文獻

[1]Tahar, RBH, Ban, T, Ohya, Y. Takahashi, Y.,“Tin doped indium oxide thin films: Electrical properties”, J. Appl. Phys., 83(1998)2631.

[2]M.J. Alam, D. C. Cameron,“Optical and electrical properties of transparent conductive ITO thin films deposited by sol–gel process”, Thin Solid Films, 377(2000)455.

[3]S. K. Park, J. I. Han, W.K. Kim, M.G. Kwak,“Deposition of indium–tin-oxide films on polymer substrates for application in plastic-based flat panel displays”, Thin Solid Films, 397(2001)49.

[4]K. L. Chopra, S. Major and D. K. Pandya,“Transparent conductors—A status review”, Thin Solid Films, 102(1983)1-46.

[5]I. Sta, M. Jlassi, M. Hajji, et al. Structural, optical and electrical properties of undoped and Li-doped NiOthin films prepared by sol–gel spin coating method . Thin Solid Films, 2014, 555: 131–13.