化學浴沉積法進行鋅摻雜氧化亞銅薄膜製備研究

The study of Cu2O：Zn by CBD

葉建麟(Chien-Lin Yeh)

指導教授 ： 籃山明

中原大學/工學院/電子工程研究所/碩士(2014年)

https://doi.org/10.6840/cycu201400291

摘要

本實驗利用化學浴沉積法(Chemical Bath Deposition)進行氧化亞銅薄膜製備，沉積薄膜的基板為純度99.96%的銅基板，並使用硫酸銅（CuSO4）和硫酸鋅（ZnSO4）水溶液調配後進行沉積。改變ZnSO4的劑量，使其控制Cu2O:Zn 薄膜中不同莫耳濃度比的摻雜濃度。ZnSO4對CuSO4的莫爾濃度比範圍為(0:1)到(0.7:1)。
在熱探針量測法(Hot probe experiment) 量測證明CBD所成長的Cu2O 薄膜的是N型；利用SIMS量測得知經由CBD所成長的氧化亞銅薄膜厚度約為2μm；而I-V量測結果換算可得在未摻雜的氧化亞銅電阻係數約為75Ω-cm，摻雜鋅之後可以達到約49 Ω-cm；根據XRD量測結果顯示(111)面為我們所要的氧化亞銅薄膜成長晶向；經由SEM觀察得知晶粒大小約為0.5~2μm；在低溫下PL量測的光譜中顯示出約716nm(1.73eV)和約 650nm(1.91eV)有明顯的發光，分別為二價氧空缺及鋅摻雜所造成的發光。

關鍵字

化學浴沉積法 ； 氧化亞銅

並列摘要

In this study, the Cu2O thin films were deposited by chemical bath deposition. The substrate of thin films were used by copper substrates that were the purity of 99.96 %. The solution deploy CuSO4 and ZnSO4. The thin films of Cu2O:Zn were doping different concentration by changing ZnSO4 dosage. The range that is molality ratio of ZnSO4 to CuSO4 is (0:1) to (0.7:1).
According to the Hot probe experiment, the Cu2O thin films were N-type. The SIMS results showed that the thickness of Cu2O thin films were about 2m. After n-Cu2O doping, the resistivity can be reduced to 49Ω-cm from 75Ω-cm. According to the XRD results, Cu2O kept the texture of prominent (111) plane. Furthermore, a large amount of grains with size of about 0.5~2m were found. Low temperature PL measurement showed a significant result of two broad peak from 716nm(1.73eV) and 650nm(1.93eV). Those were Vo++ and caused by Zn doping.

並列關鍵字

copper oxide ； Chemical Bath Deposition

參考文獻

22. 葉庭竹, “氧化亞銅沉積方法及其鋅摻雜之研究”,中原大學電子工程研究所,(2013)

1. Mazharul M. Islam, Boubakar Diawara, Vincent Maurice, Philippe Marcus, “Bulk and surface properties of Cu2O: A first-principle investigation”, Journal of Molecular Structure, vol. 903, pp. 41-48 (2009)

2. Hafsa Siddiqui, Mohammad Ramzan Parra, Padmini Pandey, Neha Singh, M.S. Qureshi and Fozia Z. Haque, “A Review : Synthesis, Characterization and Cell Performance of Cu2O Based Material for Solar Cells”, Ultra Engineer, vol. 1, pp.123-135 (2012)

3. H. Solache - Carranco, G. Juarez-Diaz, A. Esparza-Garcia, M. Briseno - Garcia, M. Galvan - Arellano, J. Martinez - Juarez, G. Romero - Paaredes, R. Pena - Sierra, ”Photoluminescence and X-ray diffraction studies on Cu2O”, vol. 129, pp. 1483-1487 (2009)

4. JianBo Liang, Naoki Kishi, Tetsuo Soga, Takashi Jimbo, Mohsin Ahmed, “Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor”, Thin Solid Films, vol. 520, pp.2679-2682 (2012)