- 學位論文
氧化亞銅沉積方法及其鋅摻雜之研究
Study of the characterization and Zn-doping of Cu2O film
摘要
本實驗利用濕氧式熱氧化沉積法沉積氧化亞銅於銅基板上，並藉由 XRD 量測得知，氧化亞銅薄膜成長主要以晶向(111)為從優取向，並隨著成 長溫度以及水氣含量增加，晶向強度有明顯增加的趨勢。此外，根據低溫 PL 量測獲得氧化亞銅薄膜發光波段於718nm、810nm 以及907nm，其分別 為材料自然缺陷的二價氧空缺、一價氧空缺以及銅空缺所產生的復合發光。 本實驗也利用化學浴沉積法所成長之氧化亞銅及其鋅摻雜成長於銅基 板上，並根據XRD 量測結果顯示在不同摻雜源濃度下的氧化亞銅薄膜其晶 向依舊保持(111)成長，並在結果上未發現其他薄膜產生。除此之外，薄膜 晶粒大小為0.8~2m，相較於文獻大了2 至20 倍左右。根據低溫PL 所示， 經鋅摻雜過後的氧化亞銅薄膜，在波段636nm (1.94eV)~645nm (1.92eV)強 度會隨著摻雜濃度增加有顯著的提升。 在摻雜鋅之氧化亞銅的電性上利用熱探針量測法以鑑定其極性。經由量 測結果，經鋅摻雜過後的氧化亞銅從本質為P 型轉變至N 型，進而推得在 低溫PL 所量測之結果，其摻雜能階約在導電帶下方0.23eV 左右的能階上。
並列摘要
In this study, the cuprous oxide films were prepared by thermal oxidation of copper planes with water vapor. According to the XRD results, Cu2O thin films were grown with preferred (111) orientation and the (111) peak intensity increased with the temperature and water vapor pressure. In addition, the measured PL spectra of Cu2O films showed the broad peaks of 718nm, 810nm and 907nm, corresponding to the luminescence of excitons trapped at double ionized oxygen vacancies, single ionized oxygen vacancies and copper vacancies. In addition, the Zn doped Cu2O films were deposited by chemical bath deposition. According to the XRD results, Cu2O still kept the texture of prominent (111) plane in spite of various concentration, and none of other crystalline phases or directions was present. Furthermore, a large amount of grains with size of about 0.8~2m were found, which is about 2 to 20 times larger than those in reported literatures. Low temperature PL measurement showed a significant result of a broad peak from 636(1.94eV) to 645(1.92eV), which was observed with Zn doping, and the peak intensity increased with Zn amount. The hot probe measurement demonstrated that Zn-doped Cu2O films are n-type semiconductors, a donor level at 0.23eV from the bottom of the conduction band.