鍶銅氧化物薄膜的製備與性質研究

Study on the preparation and properties of SrCu2O2 films

黃浤慎(Hong-Shen Huang)

指導教授 ： 施永輝

共同指導教授 ： 陳國駒(Guo-Ju Chen)

義守大學/理工學院/材料科學與工程學系/碩士(2017年)

摘要

本實驗利用射頻磁控濺鍍系統於石英玻璃基板沉積鍶銅氧化物薄膜。藉由改變退火條件、靶材La的摻雜量(0at%~9at%)以及靶材Ba的摻雜量(0at%~9at%)，探討其對鍶銅氧化物薄膜之性質影響。
實驗結果顯示，必須使用快速熱退火(RTA)，溫度為950oC，退火氣氛為氮氣環境下，會使薄膜主相以SrCu2O2為主。而溫度低於950oC的話，薄膜主相會轉變為SrCu2O2與Sr0.75CuO2。從表面顯微結構來看，隨著溫度上升薄膜的孔隙變大，在950oC的平均晶粒尺寸為21.62nm。
未摻雜的SrCu2O2薄膜其可見光區平均穿透率為71.42%，光學能隙達3.23eV，電阻率為1.92×103Ω-cm，載子遷移率為23.2cm2/Vs，載子濃度為1.4×1014cm-3；在快速熱退火950 oC 20分鐘下，摻雜La的SrCu2O2的可見光平均穿透率為78.35%，光學能隙達3.31eV；在快速熱退火950 oC 20分鐘下，摻雜Ba的SrCu2O2薄膜的電阻率為3.57×102Ω-cm，載子遷移率為40.50cm2/Vs，載子濃度為4.3×1014cm-3。

關鍵字

none

並列摘要

In this experiment, the Strontium Cuprous oxide (Sr-Cu-O) films were deposited on quartz substrates by RF magnetron sputtering. The properties of Sr-Cu-O thin films were influenced by various annealing conditions, as well as the doping level of La and Ba.
The experimental results show that the main SrCu2O2 phase of the films can be obtained by rapid thermal annealing (RTA) at 950oC and under nitrogen atmosphere. However, the main phase of the films will transfer to SrCu2O2 and Sr0.75CuO2, when the temperature is lower than 950oC. Observation on the microstructure of films revealed that the porosity of the films increased with temperature, and the average grain of the films was 21.62nm for the films annealed at 950oC.
The pure SrCu2O2 films annealed at 950oC shows the average transmittance of 71.42%, the band gap energy of 3.23eV, optimal resistivity of 1.92×103 Ω-cm, carrier mobility of 23.2cm2/Vs and carrier concentration of 1.4×1014cm-3, the La doping SrCu2O2 films annealed at 950oC in 20mins shows the average transmittance of 78.35%, the band gap energy of 3.31eV, the Ba doping SrCu2O2 films annealed at 950oC in 20mins shows the optimal resistivity of 3.57×102 Ω-cm, carrier mobility of 40.50cm2/Vs and carrier concentration of 4.3×1014cm-3.

並列關鍵字

none

參考文獻

[1]. Su sheng, Guojia Fang, Chun Li, Sheng Xu, Xingzhong Zhao, “P-type transparent conducting oxides”, Phys. Stat. sol. (a) 203, No. 8, 2006, pp. 1891–1900

[2]. H. Sato, T. Minami, S. Takata, T. Yamada, “Transparent conducting p-type NiO thin films prepared by magnetron sputter”, Thin Solid Films, 236 1993 , pp. 27-31

[3]. H. Kawazoe, M. Yasukawa, M. Hyodou et al. “P-type electrical conduction in transparent thin film of CuAlO2”, Nature, 389 1997, pp.939-942

[4]. A. Kudo, H. Yanagi, H. Hosono, H. Kawazoe, “SrCu2O2: A p-type conductive oxide with wide band gap”, Appl. Phys. Lett, 73 1998, pp.220-222

[5]. Yiping Zhao, Weiwei Dong, Xiaodong Fang, et al. “P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application”, Journal of Alloys and Compounds, 513 2012 , pp.50– 54