銦錫氧化物作為銅製程中擴散阻礙層之研究

Study of Nanocrystalline Indium Tin Oxide as Diffusion Barrier for Copper Metallization

劉健民(Chien-Ming Liu)

指導教授 ： 楊立中

共同指導教授 ： 陳文照

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2005年)

https://doi.org/10.6827/NFU.2005.00004

摘要

本研究利用穿透式電子顯微鏡（TEM）、掃描式電子顯微鏡（SEM）、X光繞射儀（XRD）、X射線能量散佈分析儀（EDS）及四點探針（four-point probe）來分析銦錫氧化物（Indium Tin Oxide，ITO）作為銅與矽間之擴散阻礙層特性與性能。研究結果發現在銅與矽之間的銦錫氧化物薄膜結構為微晶厚度為10 nm，銦錫氧化物薄膜能有效的阻礙銅與矽之間的擴散。
銦錫氧化物薄膜可以阻礙銅擴散至矽的溫度達650℃。銦錫氧化物薄膜之失效溫度為700℃。研究結果顯示銦錫氧化物薄膜可有效的作為銅製程中之擴散阻礙層。
銦錫氧化物阻礙層的失效機制為銅薄膜先產生聚集效應後誘發銦錫氧化物薄膜產生聚集效應而失效。為提高銦錫氧化物阻礙層失效溫度，在銅薄膜上沉積一層厚度20 nm的銦錫氧化物薄膜作為覆蓋層（capping layer），研究結果發現capping layer能有效提高銦錫氧化物阻礙層失效溫度達750℃。

關鍵字

non

並列摘要

The characteristics and performance of indium tin oxide (Indium Tin Oxide, ITO) as diffusion barrier between copper and silicon were studied by using the transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and sheet resistance measurement. The results revealed that the structure and thickness of indium tin oxide between copper and silicon is nanocrystalline and 10 nm, respectively and it can be effective to hinder diffusion between copper and silicon.
The indium tin oxide thin film was found to be a good diffusion barrier against Cu at least up to 650°C. The failure temperature of ITO films diffusion barrier (10 nm) was about 700°C. Our results show that ITO film can be considered as diffusion barriers for Cu metallization.
The failure mechanism of indium tin oxide diffusion barrier is that the agglomeration of copper thin film and then induced indium tin oxide thin film to agglomerate. In order to raise the failure temperature, the indium tin oxide of 20 nm was deposited on copper as a capping layer. The results show that the failure temperature was lifted 750℃ after adding a capping layer ITO on Cu film.

並列關鍵字

non

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