The objective of this research is to investigate the degradation of ZrN film annealed in forming gas (N2/H2=9). The films were deposited onto (100) Si substrate by unbalanced magnetron sputtering. Annealing was conducted in the temperature range of 300-1200℃. X-ray diffraction results showed that monoclinic Zr02 appeared above 700℃. Changes in the morphology of the films were examined by a scanning electron microscope. Large blisters with the size of 5~10μm appeared above 400℃. Some blisters have a broken surface. Many small irregular blisters showed up above 800°C. The formation of those large blisters was due to stress relaxation. As for the small blisters, they were essentially resulted from oxidation.