以漿料改質提升雷射燒結銅薄膜電化學腐蝕特性

本研究進行以雷射光源將氧化亞銅奈米顆粒還原燒結成高導電銅薄膜之技術開發，透過添加不同分子量聚乙烯吡咯烷酮（PVP），將漿料組成最佳化，並研究各條件銅導電薄膜在3.5 wt%NaCl溶液中之電化學腐蝕行為。研究結果顯示，調整PVP分子量（10,000至1,300,000 g/mol）與雷射功率、掃描速度及間距等雷射條件，銅薄膜體之平均電阻率可降至3.3 μΩ-cm。通過穿透式電子顯微鏡（TEM）、X射線光電子能譜（XPS）以及Zeta potential分析發現，不同分子量PVP添加混和漿料會在氧化亞銅粒子表面形成不同厚度之非晶薄層，進而在氧化亞銅漿料顆粒的分散性上起到關鍵作用。分析各條件銅導電薄膜極化曲線得知，使用PVP分子量360,000 g/mol混和漿料形成之銅導電薄膜具最高的腐蝕電位與最低的腐蝕速率，並得到抗腐蝕能力與表面孔隙率呈反比的趨勢。

關鍵字

雷射燒結；氧化亞銅奈米粒子；聚乙烯吡咯烷酮；電化學腐蝕

並列摘要

In this study, we developed a technique for the reduction sintering of copper oxide nanoparticles into highly conductive copper thin films using a laser light source. The composition of the paste was optimised by adding different molecular weights of polyvinylpyrrolidone (PVP), and the electrochemical corrosion behaviour of the copper conductive thin films in 3.5 wt % NaCl solution was investigated under various conditions. The results showed that the resistivity of copper thin films could be reduced to 3.3 μΩ-cm by adjusting the PVP molecular weight (10,000 to 1,300,000 g/mol), laser power, scanning speed and interval. TEM, XPS and Zeta potential analysis revealed that the addition of different molecular weights of PVP to the blended paste resulted in different thicknesses of amorphous layers on the surface of the cuprous oxide particles, which in turn played a key role in the dispersion of the cuprous oxide particles. Analysis of the polarisation curves of the copper conductive films for each condition showed that the highest corrosion potential and lowest corrosion rate were observed in the copper conductive films formed using PVP molecular weight 360,000 g/mol blends, and an inverse trend of corrosion resistance versus surface porosity was observed.

並列關鍵字

Laser sintering ； Cu_2O nanoparticle ； PVP ； Electrochemical corrosion

參考文獻

Z. Cui, in: Printed electronics: materials, technologies and applications (John Wiley & Sons) 2016.

Google Scholar

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