800℃條件下成長p型氮化鋁銦鎵/氮化鎵雙重披覆層的氮化物發光二極體

Nitride-based LEDs with 800℃-grownp-AlInGaN/GaN Double Cap Layers

武良文(Liang-Wen Wu)

《真空科技》 17卷2期 (2004/09) Pp. 62-66

https://doi.org/10.29808/JVSROC.200409.0011

摘要

許多不同p型披覆層的氮化物發光二極體(LEDs) 已經製備。我們發現在800℃下成長披覆層的氮化物LED，其表面型態是粗糙的，因為氮化鎵在側向的成長速度較慢。而且也發現20mA時，800℃成長的p型氮化鋁銦鎵/氮化鎵雙重披覆層LED順向電壓只有3.05V。除此之外，藉著使用這種800℃下成長的p型氮化鋁銦鎵/氮化鎵雙重披覆層，我們可以得到高輸出功率以及長的元件壽命。

關鍵字

氮化銦鎵/氮化鎵 ； 多重量子井 ； 發光二極體 ； 氮化鋁銦鎵

並列摘要

GaN-based light emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800oC-grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20 mA forward voltage of the LED with 800oC-grown p-AlInGaN/GaN double cap layer was only 3.05V. Furthermore, it was found that we could achieve a high output power and a long lifetime by using the 800oC-grownp-AlInGaN/GaN double cap layer.

並列關鍵字

InGaN/GaN ； MQW ； LEDs ； AlInGaN