- 期刊
Low Temperature Polycrystalline Silicon Thin Film Transistors Fabricated by Amorphous Silicon Spacer Structure with Pre-Patterned TEOS Oxide Layer
並列摘要
In this paper, location-controlled grain growth with α-Si spacer structure was fabricated. Consequently, High-performance poly-Si TFTs with field-effect mobility exceeding 367cm^2/V-s and high device uniformity have been fabricated. The excellent electrical characteristics is attributed to large grain and grain boundary elimination in the channel region.
並列關鍵字
無資料被引用紀錄
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延伸閱讀
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