矽奈米線薄膜太陽能電池之製造與特性分析

Fabrication and Characterization of Silicon Nanowires Thin Film Solar Cell

劉建惟 ； 李彥希 ； 戴寶通

《真空科技》 22卷2期 (2009/06) Pp. 21-27

https://doi.org/10.29808/JVSROC.200906.0003

摘要

本研究主要為研製一高效率矽奈米線太陽能電池。利用氣－液－固成長技術達成大面積成長具超高比表面積、低反射率、可調能隙及寬頻光吸收之矽奈米線，以大大提升電池效率，並將其應用於第三代太陽能電池。目前已完成(1)矽奈米線太陽能電池之元件設計，(2)矽奈米線之製備技術開發，(3)矽奈米線之部份材料分析及光特性量測，以及(4)矽奈米線太陽能電池試製。試製完成之矽奈米線太陽能電池，其表面具絕佳之抗反射特性，低於0.08%之超低反射率，於AM1.5光源、100mW/平方公分之光強度照射下，可以獲得Voc~0.42V。Jsc~1.85mA/平方公分。F.F.~67.98%，η~0.53%。

關鍵字

矽奈米線 ； 氣－液－固 ； 第三代太陽能電池

並列摘要

This study is to develop and fabricate a high efficiency silicon nanowires (SiNWs) solar cell. The large area growth of SiNWs which have a super high specific surface area, a low reflectance, the tunable energy band gaps (Egs) and a wider absorption range of light will be developed to enhance the efficiency of solar cells by using vapor-liquid-solid (VLS) method for the advanced applications of 3(superscript rd) generation solar cells. In the present, the completed work tasks include with (1) the design of SiNWs solar cell, (2) the development of growth technique of SiNWs, (3) the measurement and analysis of the material and optic properties of SiNWs and (4) the test of fabricated SiNWs solar cell. The completed prototype of SiNWs solar cell has an excellent anti-reflection capability and a lowest reflectance of ＜0.08%. This cell can provide a Voc of 0.42V, a Jsc of 1.85mA/cm^2, a F.F. of 67.98%, and an energy conversion efficiency (η) of 0.53% under the AM1.5 illumination with an incident light intensity of 100 mW/cm^2.

並列關鍵字

silicon nanowires ； vapor-liquid-solid ； 3(superscript rd) generation solar cell