本研究主要目的為利用蝕刻技術製作奈米粗糙化之抗反射層,以提升單晶矽太陽能電池之效率。本論文中,完成研製奈米粗糙化抗反射層之技術及對太陽能電池效率之探討,研究工作包括有:(1)矽表面粗糙化製程技術(2)氮化矽抗反射層光學分析(3)奈米粗糙化抗反射層之蝕刻技術(4)單晶矽太陽能電池之製作及效率分析。經單晶矽粗糙化製程及氮化矽抗反射層的參數最佳化後,利用厚度為80nm的氮化矽,以六氟化硫(SF6)電漿,進行抗反射層粗糙化之蝕刻製程。由量測得知,可降低光波長範圍250-400 nm約平均1%的反射率。最後將此抗反射層之蝕刻技術整合於單晶矽太陽能電池製程中,可提升太陽能電池效率約0.1%。
The objective of this study is to enhance the cell efficiency of single crystal silicon solar cell by etching method. Solar cell design involves specifying the parameters of a solar cell structure in order to maximise efficiency, given a certain set of constraints. In this thesis, the feasibility study was done which included with the (1) methods of surface texturing silicon solar wafer (2) optical effects of silicon nitride (Si3N4) Anti- Reflective Coatings(ARC) (3) etching method of nanostructure anti-reflection film (4) the measurement of c-Si solar cell efficiency. By optimizing the method of the silicon surface texturing and the thickness of Si3N4 Anti-Reflective Coatings, we used the SF6 plasma to texture the Si3N4 ARC with 80nm. The etching results indicate that an average reflectance of less than 1% in the wavelength range from 250nm to 400nm. As a result, the cell efficiency with nanostructure anti-reflection film by etching methods is enhanced about 0.1%.