對太陽電池而言,元件表面之反射率扮演了相當重要的角色;因此我們必須利用抗反射膜來增加入射光在電池表面的穿透率。且因為Ⅲ-Ⅴ族化合物半導體太陽電池與矽基板太陽電池相較之下,具有高轉換效率、高輻射阻抗、可高溫操作與適合薄膜化等優點,使其成為近年來太陽電池發展的重點之一。在本篇報告中,我們將針對Ⅲ-Ⅴ族化合物半導體太陽電池,利用模擬軟體(Film Star)設計太陽電池之抗反射膜,並且建立一個自製(homemade)之頻譜響應量測系統與HP4155,量測太陽電池之頻譜響應與I-V特性;並藉由此頻譜響應與I-V特性量測結果,來瞭解抗反射膜對電池效率的改善情形;並以薄膜光學的理論機制加以解釋其反射率與量子效率的相關性。
The reflectance on the device surface influences greatly the energy conversion efficiency of solar cell and should be considered as an important topic concerned with the practical use of solar cells. In this study, we use the technique of AR coating (anti-reflectance coating) to lessen the influence of reflectance and therefore to increase the transmittance of illuminating light. Compared with the silicon-based solar cells, the III-Vs-based solar cells present many advantages, such as high transformation, high radiation resistance, high temperature operation. For these reasons, the industry has been developing III-Vs-based solar cells for a few years. In this study, we first use the simulation software Film Star to design the AR coating of solar cell, and demonstrate how the spectral responses of multi-junction solar cell as well as its each single subcell component can be measured separately. Then we built a homemade measure system and employed it to characterize the spectral response of multi-junction solar cell. We also measured the I-V behavior of our solar cell by HP 4155. The improvements of the solar cells with AR coating were recognized by the above measurements. Finally, the correlation between the reflectance and the quantum efficiency of solar cell was explained by thin film optics.