透過射頻磁控濺鍍法製作多層氮氧化矽薄膜以作為抗反射層之應用

Fabrication of Silicon Oxynitride Multilayer Thin Film by RF Magnetron Sputtering for Antireflection Coating Applications

楊為琳(Wei-lin Yang)

指導教授 ： 施文欽

大同大學/電機資訊學院/光電工程研究所/碩士(2009年)

摘要

抗反射薄膜已經成為矽晶太陽能電池的製程關鍵步驟之ㄧ，其可降低光的反射，進而增加入射光。本論文主要是利用光學模擬軟體Film Star來模擬抗反射薄膜之特性，再用射頻磁控濺鍍(RF magnetron sputtering)法成長氮化矽(Si3N4)和不同折射率變化的氮氧化矽(SiOxNy)薄膜在Si 基板，並且做表面型態與材料結構分析，接著搭配單層、雙層及三層薄膜做不同光學厚度的堆疊，在可見光範圍下獲得反射率的降低。
從單層抗反射膜的部份來看，SiOxNy折射率在1.96，搭配λ/4的厚度，平均反射率為6.2 %並且在550 nm部分有最低反射率；雙層抗反射膜在λ/4-λ/4的平均反射率為5.9 %，三層抗反射層的平均反射率為5.3 %。期望可將抗反射膜應用在太陽電池上，以降低反射率，而增加太陽電池之效率。

關鍵字

抗反射層 ； 氮氧化矽

並列摘要

Antireflection coatings play an important role in solar cell producing process; they can reduce the reflectance and increase the incident light at solar spectrum. This study utilized Film Star software to simulate the characteristic of antireflection coatings. Using RF magnetron sputtering deposit Si3N4 and silicon oxynitride thin films on silicon substrate, and then research the material structure and composition. With different optical thickness stacking, the reflectance will obtain the lower reflectance at visible region.
Obey the quarter-wavelength of optical thickness, the single layer of SiON(n=1.96) should have one lowest reflectance at 550 nm, the total reflectance average at visible spectrum (400~800 nm) was about 6.2 %. The double-layer of SiON films with optimize thickness, the average reflectance resulted in 5.9 %. The tri-layer have the average reflectance at visible light range was 5.3 %. Consequently, the silicon oxynitride films changing refractive index will absorb the widen spectrum and increasing the efficiency for solar cell devices.

並列關鍵字

antireflection coating ； SiON

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