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微晶矽薄膜太陽電池之實作與分析

Fabrication and Characterization of Microcrystalline Silicon Thin-Film Solar Cells

摘要


本研究乃以Crosslight模擬軟體進行單一接面(pin)微晶矽薄膜太陽電池結構之最佳化設計,並以熱燈絲化學氣相沉積(hot-wire CVD, HWCVD)系統實際製作微晶矽薄膜太陽電池。Crosslight是一種元件與製程方面的電腦輔助設計與模擬軟體,可以快速的設計太陽電池各層的特性並得到模擬的元件結果。HWCVD是一種薄膜沉積技術,HWCVD相較於傳統的電漿輔助化學氣相沉積法擁有許多優點,如沉積速度快、大面積沉積、矽膜含氫量低、設備成本低等等,是適合開發研究製作太陽電池元件的一種技術。過去幾年,本實驗室利用HWCVD沉積矽薄膜的技術已發展成熟,也完成矽膜之結構、光學及電氣特性分析。在本研究中,透過Crosslight模擬軟體對元件結構進行優化工作,透過不同的濃度與摻雜量模擬,可得到最佳的元件特性為開路電壓0.71V、短路電流21.31mA、轉換效率為12.12%。透過此元件的結構,我們使用HWCVD試圖實現模擬的結果,計畫首先針對HWCVD所製作的各層之光電材料特性進行分析,尋求最佳的製程參數後,再進行元件製作,目前產出之最佳的p-i-n微晶矽薄膜太陽電池(1cm×1cm)之轉換效率為3.48%(開路電壓0.55V、短路電流13.2mA/平方公分,填充因子55%),有關微晶矽薄膜太陽電池模擬值與實驗值之可能差異因素也將在本報告中一併討論。

並列摘要


In this research, micro-crystalline silicon thin film solar cells were fabricated using hot-wire chemical vapor deposition (HWCVD) with a Crosslight simulation software. The Crosslight software is a kind of 3D computer simulator for optoelectronic device and process. This simulator can design material properties of each layer in solar cell and quickly find out the final device characteristics. From the experiments, some important properties of HWCVD silicon films like microstructural, optical and electrical properties of the silicon films were studied. The device structure and process of the microcrystalline silicon thin film solar cells have been optimized. We achieved the p-i-n microcrystalline silicon thin-film solar cell (1cm×1cm) with a conversion efficiency of 3.48 % (V(subscript oc)=0.55 V, I(subscript sc)=13.2 mA, FF=55%) by using the single chamber HWCVD system. However, it still shows lower efficiency performance as compared with that from the simulation result (12.12%). More details of the discrepancy between experimental and simulation data will be discussed in this report.

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