3 nm Ta-C-N阻障層特性與銅製程整合

3 nm Ta-C-N Film as a Diffusion Barrier for Copper Metallization

陳蓁慧(Chen-Hui Chen) ； 洪士育(Shi-Yu Hong) ； 邱敬富(Chin-Fu Chiu) ； 簡竹模(Chu-Mo Chien) ； 方昭訓(Jau-Shiung Fang)

《真空科技》 23卷1期 (2010/03) Pp. 25-32

https://doi.org/10.29808/JVSROC.201003.0005

摘要

本研究以直流磁控濺鍍法在p-Si(100)基板上沈積Ta-C-N薄膜，並形成Cu/Ta-C-N(3nm)/Si三明治結構，探討Ta-C-N薄膜熱穩定性與作為銅金屬之阻障層薄膜特性。結構薄膜利用快速退火爐(RTA)在Ar/H2(5%)氣氛下持溫30分鐘熱處理，並藉由FPP、XRD、SEM、TEM、EPMA及AES分析Ta-C-N薄膜之特性。由結果得知Cu/Ta58C37/Si、Cu/Ta53C34N12/Si和Cu/Ta47C34N15/Si失效溫度分別為600℃、725℃與700℃，實驗結果明顯指出在TaC薄膜中適當摻雜N可增進其熱穩定性，並可有效阻擋銅擴散。因為Ta-C-N皆為目前半導體製程所用之元素，此薄膜有潛力應用於半導體銅金屬化製程之擴散阻礙層。

關鍵字

Ta-C-N薄膜 ； 鉭碳化合物 ； 擴散阻障層 ； 銅製程

並列摘要

This study aims at developing an ultrathin Ta-C-N barrier on p-Si (100) substrate by DC magnetron sputtering, and discussing the thermal stability of the Ta-C-N thin film for copper metallization. The Cu/Ta-C-N (3 nm)/Si stacked film was annealed in Ar/H2 (5%) at an elevated temperature for 30 minute by a rapid thermal annealer (RTA), and the properties of the film were examined by FPP, XRD, SEM, TEM, EPMA and AES. The results exhibited that the Cu/Ta58C37/ Si, Cu/Ta53C34N12/Si and Cu/Ta47C34N15/Si film showed the failure temperature of 600℃, 725℃ and 700℃, respectively. Incorporation of N into the Ta-C thin film is effective to improve the thermal stability and it is useful to suppress the copper diffusion. The elements of Ta-C-N are capable of the current semiconductor processes, so the thin film has the potential to be used as a diffusion barrier for the copper metallization.

並列關鍵字

Ta-C-N film ； TaC ； Diffusion Barrier ； Copper Metallization